Study of self-powered UV detector based on Sb-doped β-Ga2O3 thin film/P–Si heterojunction

• Published in: Optical materials Vol. 145; p. 114431
• Main Authors: Feng, Qiu-Ju, Yu, Chen, Yi, Zi-Qi, Sui, Xue, Wang, Yan-Ming, Wang, Shuo, Wang, De-Yu, Shi, Jia-Hui, Sun, Jing-Chang, Laing, Hong-Wei
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.11.2023
• Subjects: CVD; Photodetector; Sb-doping; β-Ga2O3 thin films; CVD; Sb-doping; β-Ga2O3 thin films; Photodetector
• ISSN: 0925-3467; 1873-1252
• DOI: 10.1016/j.optmat.2023.114431

Sb-doped β-Ga2O3 thin films with different contents were grown on p-type Si substrates by chemical vapor deposition (CVD). It is found that the surface morphology and crystal quality of β-Ga2O3 films are improved with increasing Sb contents, which is mainly caused by the fact that amount of Sb can act as surface activator. The self-powered solar-blind UV photodetectors base on Sb-doped β-Ga2O3 thin films/Si heterojunction was fabricated. The heterojunction device exhibited high Ilight/Idark ratio of up to ∼1.6 × 103 and relatively fast photoresponse speed (0.07/0.09 s). Furthermore, the heterojunction photodetectors also show excellent photosensitive characteristics with responsivity of 210 mA/W, and external quantum efficiency of 103% under 254 nm illumination (60 μW/cm2) at 0 V. This doping technique provided a feasible method for n-type β-Ga2O3 doping and the preparation of ultraviolet photodetectors. [Display omitted] •Sb doped β-Ga2O3 thin films with different contents were grown by CVD.•The self-powered solar-blind UV photodetectors base on Sb-doped β-Ga2O3 thin films/Si was fabricated.•This doping technique provided a feasible method for n-type β-Ga2O3 doping and the preparation of UV photodetectors.