Diffusion of Pb in carbon ion-implanted silicon: Discovery of a new crystalline phase after electron beam annealing
A novel phase has been discovered by dual low-energy ion implantation and high vacuum electron beam annealing. (100) p-type Si was implanted with (a) 20 keV 12C + ions to the fluence of 6 × 10 16 cm −2 and (b) 7 keV Pb + ions to the fluence of 4 × 10 15 cm −2. The 12C ion implantation results in an...
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Published in | Vacuum Vol. 82; no. 11; pp. 1306 - 1311 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
Elsevier Ltd
19.06.2008
|
Subjects | |
Online Access | Get full text |
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Summary: | A novel phase has been discovered by dual low-energy ion implantation and high vacuum electron beam annealing. (100) p-type Si was implanted with (a) 20
keV
12C
+ ions to the fluence of 6
×
10
16
cm
−2 and (b) 7
keV Pb
+ ions to the fluence of 4
×
10
15
cm
−2. The
12C ion implantation results in an understoichiometric shallow SiC
x
layer that intersects with the surface. The implanted Pb ions decorate a shallow subsurface region. High vacuum electron beam annealing at 1000
°C for 15
s using a temperature gradient of 5
°C
s
−1 leads to the formation of large SiC nanocrystals on the surface with RBS measurements showing Pb has diffused into the deeper region affected by the
12C implantation. In this region, a new crystalline phase has been discovered by XRD measurements. |
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ISSN: | 0042-207X 1879-2715 |
DOI: | 10.1016/j.vacuum.2008.02.006 |