Equilibrium configurations and electronic structure of fullerene ultrathin films on SrTiO3(001) surface

[Display omitted] •Monolayer C60 film is grown on a SrTiO3(001) surface for the first time.•Monolayer C60 exhibit a short-range ordered molecular arrangement, while multi-layer C60 show a quasi-(2 × 2) superstructure with a chiral pinwheel motif.•Monolayer C60 on STO shows the largest HOMO-LUMO gap...

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Published inApplied surface science Vol. 635; p. 157768
Main Authors Zhang, Wenxuan, Wang, Xutao, Liu, Ningning, Wang, Jinyue, Qu, Yueqiao, Guan, Dan-Dan, Wang, Shiyong, Zheng, Hao, Li, Yao-Yi, Liu, Canhua, Jia, Jin-Feng
Format Journal Article
LanguageEnglish
Published Elsevier B.V 30.10.2023
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Summary:[Display omitted] •Monolayer C60 film is grown on a SrTiO3(001) surface for the first time.•Monolayer C60 exhibit a short-range ordered molecular arrangement, while multi-layer C60 show a quasi-(2 × 2) superstructure with a chiral pinwheel motif.•Monolayer C60 on STO shows the largest HOMO-LUMO gap comparing to those on any other substrates. Ultrathin fullerene (C60) films on various metal and semiconductor substrates have been intensively studied but not yet on a perovskite oxide substrate. Using scanning tunneling microscopy and spectroscopy, we investigated the molecular arrangement and electronic structure of C60 ultrathin films grown on a SrTiO3(001) surface. Subject to strong coupling and weak screening from the substrate, the monolayer C60 exhibit short-range ordered molecular arrangement with disordered molecular orientation and a substantially large highest occupied molecular orbital-lowest unoccupied molecular orbital (HOMO-LUMO) gap (∼4.1 eV). In contrast, C60 in the 2nd and 3rd layers are self-assembled into hexagon lattices with a quasi-(2 × 2) superstructure resulted from the arrangement of molecular orientations showing a chiral pinwheel structure. The HOMO-LUMO gap of the multi-layer C60 further expands to ∼ 4.6 eV, very close to that of gas-phase C60, indicating a negligible inter-layer screening effect.
ISSN:0169-4332
DOI:10.1016/j.apsusc.2023.157768