In situ resistivity measurements during growth of ultra-thin Cr0.7Mo0.3

• Published in: Thin solid films Vol. 515; no. 2; pp. 583 - 586
• Main Authors: GYLFASON, K. B, INGASON, A. S, AGUSTSSON, J. S, OLAFSSON, S, JOHNSEN, K, GUDMUNDSSON, J. T
• Format: Conference Proceeding Journal Article
• Language: English
• Published: Lausanne Elsevier Science 25.10.2006
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Deposition by sputtering; Electrical properties of specific thin films; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Theory and models of film growth; Thin films; Grain size; Temperature dependence; Cathode sputtering; In situ resistivity; Thin film; Magnetron sputtering; Lattice matching; 73.61.-r; 73.61.At; 81.05.Bx; 81.15.Cd; Electrical conductivity; Monolayers; Growth mechanism; Physical vapor deposition; Coalescence; Film growth
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2005.12.174

The growth of ultra-thin, lattice matched, Cr0.7Mo0.3 films on an MgO substrate, in a dc magnetron discharge, was investigated by in situ measurements in order to determine the minimum thickness of a continuous layer. The thickness dependence of the resistivity shows a coalescence thickness of less than two monolayers indicating layer by layer growth of the films. We compare the resistivity of the films to a combination of the Fuchs-Sondheimer and the Mayadas-Shatzkes models, assuming a thickness dependence of grain size. The model indicates that grain size increases with increasing growth temperature.