Axial heterostructure of Au-catalyzed InGaAs/GaAs nanowires grown by metal-organic chemical vapor deposition

[Display omitted] •Perpendicular nanowires heterostructure.•Distinct interface.•Without radial growth. Nanowires (NWs) of GaAs and InGaAs/GaAs axial heterostructure are fabricated by metal-organic chemical vapor deposition (MOCVD) following the vapor-liquid-solid (VLS) mechanism. Thin film of Au is...

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Bibliographic Details
Published inChemical physics letters Vol. 692; pp. 28 - 32
Main Authors Yuan, Huibo, Li, Lin, Li, Zaijin, Wang, Yong, Qu, Yi, Ma, Xiaohui, Liu, Guojun
Format Journal Article
LanguageEnglish
Published Elsevier B.V 16.01.2018
Subjects
Axial heterostructure
InGaAs/GaAs
MOCVD
Nanowire
Nanowire
Axial heterostructure
MOCVD
InGaAs/GaAs
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Summary:[Display omitted] •Perpendicular nanowires heterostructure.•Distinct interface.•Without radial growth. Nanowires (NWs) of GaAs and InGaAs/GaAs axial heterostructure are fabricated by metal-organic chemical vapor deposition (MOCVD) following the vapor-liquid-solid (VLS) mechanism. Thin film of Au is coated to generate catalytic droplets and the impact of film thickness on distribution of catalytic droplets is studied. With growth temperature varying, different geometries of GaAs NWs are observed and an assumption has been proposed to explain the phenomenon. InGaAs/GaAs NWs with axial heterostructures are synthesized. Most of InGaAs/GaAs NWs are perpendicular to substrates with cylindrical morphology and distinct heterostructure interface. Energy Dispersive X-ray Spectroscopy (EDX) line-scan’s been applied to investigate the concentration changes of nanowires, indicating pure axial heterostructures without radial growth.
ISSN:0009-2614
1873-4448
DOI:10.1016/j.cplett.2017.11.061