Resistive switching in graphene/graphene oxide/ZnO heterostructures

• Published in: Journal of the Korean Physical Society Vol. 64; no. 10; pp. 1399 - 1402
• Main Authors: Kapitanova, O. O., Panin, G. N., Kononenko, O. V., Baranov, A. N., Kang, T. W.
• Format: Journal Article
• Language: English
• Published: Seoul The Korean Physical Society 01.05.2014; 한국물리학회
• Subjects: Mathematical and Computational Physics; Particle and Nuclear Physics; Physics; Physics and Astronomy; Theoretical; 물리학; Graphene; Non-volatile memory; 73.61.Wp; Zinc oxide nanorods; Resistive switching memory; Graphene oxide; Planar and vertical layer heterostructures; 81.05.Zx; 81.05.Tp
• ISSN: 0374-4884; 1976-8524
• DOI: 10.3938/jkps.64.1399

Planar and vertical heterostructures based on graphene/graphene oxide/ZnO nanorods were investigated using optical and electrical characterizations. ZnO nanorods grown on graphene substrate by using the hydrothermal method were used for local oxidation of graphene and the formation of self-assembled graphene/graphene oxide lateral and vertical heterostructures under an electric field. The graphene substrates were prepared by deposition of graphene oxide suspensions, followed by thermal reduction or the growth of graphene by using chemical vapor deposition. The vertical heterostructure demonstrated well-reproducible resistive switching for low offset voltage and could be used to fabricate high-density memory devices with low power consumption.