Demonstration of optical nonlinearity in InGaAsP/InP passive waveguides

We report on the study of the third-order nonlinear optical interactions in InxGa1-xAsyP1-y/InP strip-loaded waveguides. The material composition and waveguide structures were optimized for enhanced nonlinear optical interactions. We performed self-phase modulation, four-wave mixing and nonlinear ab...

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Bibliographic Details
Published inOptical materials Vol. 84; pp. 524 - 530
Main Authors Saeidi, Shayan, Rasekh, Payman, Awan, Kashif M., Tüğen, Alperen, Huttunen, Mikko J., Dolgaleva, Ksenia
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.10.2018
Subjects
Integrated optics
Nonlinear optics
Optical devices
Integrated optics
78-05
82D37
78A60
Nonlinear optics
Optical devices
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Summary:We report on the study of the third-order nonlinear optical interactions in InxGa1-xAsyP1-y/InP strip-loaded waveguides. The material composition and waveguide structures were optimized for enhanced nonlinear optical interactions. We performed self-phase modulation, four-wave mixing and nonlinear absorption measurements at the pump wavelength 1568 nm in our waveguides. The nonlinear phase shift of up to 2.5π has been observed in self-phase modulation experiments. The measured value of the two-photon absorption coefficient α2 was 19 cm/GW. The four-wave mixing conversion range, representing the wavelength difference between maximally separated signal and idler spectral components, was observed to be 45 nm. Our results indicate that InGaAsP has a high potential as a material platform for nonlinear photonic devices, provided that the operation wavelength range outside the two-photon absorption window is selected.
ISSN:0925-3467
1873-1252
DOI:10.1016/j.optmat.2018.07.037