Electron Raman scattering in a double quantum well tuned by an external nonresonant intense laser field

• Published in: Optical materials Vol. 64; pp. 496 - 501
• Main Authors: Tiutiunnyk, A., Mora-Ramos, M.E., Morales, A.L., Duque, C.M., Restrepo, R.L., Ungan, F., Martínez-Orozco, J.C., Kasapoglu, E., Duque, C.A.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.02.2017
• Subjects: Intense laser field; Quantum well; Raman scattering; Quantum well; Raman scattering; Intense laser field
• ISSN: 0925-3467; 1873-1252
• DOI: 10.1016/j.optmat.2017.01.001

In this work we shall present a study of inelastic light scattering involving inter-subband electron transitions in coupled GaAs-(Ga,Al)As quantum wells. Calculations include the electron related Raman differential cross section and Raman gain. The effects of an external nonresonant intense laser field are used in order to tune these output properties. The confined electron states will be described by means of a diagonalization procedure within the effective mass and parabolic band approximations. It is shown that the application of the intense laser field can produce values of the intersubband electron Raman gain above 400 cm−1. The system proposed here is an alternative choice for the development of AlxGa1−xAs semiconductor laser diodes that can be tuned via an external nonresonant intense laser field. •Electronic states of double GaAs quantum wells.•Externally applied intense nonresonant laser field.•Intersubband Raman differential cross section.•Calculation of intersubband Raman gain.