Optical properties of ITO/ZnO Schottky diode with enhanced UV Photoresponse

Photoluminescence (PL) spectra of zinc oxide (ZnO) samples with different hydrogen peroxide (H 2 O 2 ) treatment durations were measured to examine several point defects on the surfaces of the films. The results suggest successful oxidation through the reaction between oxygen radicals dissociated fr...

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Bibliographic Details
Published inJournal of the Korean Physical Society Vol. 67; no. 10; pp. 1804 - 1808
Main Authors Lee, Hsin-Yen, Chern, Ming-Yau
Format Journal Article
LanguageEnglish
Published Seoul The Korean Physical Society 01.11.2015
한국물리학회
Subjects
Mathematical and Computational Physics
Particle and Nuclear Physics
Physics
Physics and Astronomy
Theoretical
물리학
ZnO
Photocurrent
ITO
Photoluminescence
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Summary:Photoluminescence (PL) spectra of zinc oxide (ZnO) samples with different hydrogen peroxide (H 2 O 2 ) treatment durations were measured to examine several point defects on the surfaces of the films. The results suggest successful oxidation through the reaction between oxygen radicals dissociated from H 2 O 2 and the ZnO surface. To further confirm the defect-induced gain mechanism, we fabricated highly transparent indium-tin-oxide (ITO)/ZnO Schottky diodes and measured the key diode characteristics. Photocurrents were measured at different wavelengths, and possible explanations for the high optical gain within the ultraviolet (UV) region are provided.
Bibliography:G704-000411.2015.67.10.015
ISSN:0374-4884
1976-8524
DOI:10.3938/jkps.67.1804