Improvement of the charge imbalance caused by the use of a p-type silicon anode in an organic light-emitting diode

An indium-tin oxide anode was replaced with a p-type silicon anode in a bilayer small-molecule organic light-emitting diode. As results, the current increased largely due to the enhanced hole injection and the higher conductivity of the Si anode; the luminous efficiency decreased significantly due t...

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Bibliographic Details
Published inChemical physics letters Vol. 400; no. 4; pp. 401 - 405
Main Authors Ran, G.Z., Wu, Z.L., Ma, G.L., Xu, A.G., Qiao, Y.P., Wu, S.K., Yang, B.R., Qin, G.G.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 21.12.2004
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Summary:An indium-tin oxide anode was replaced with a p-type silicon anode in a bilayer small-molecule organic light-emitting diode. As results, the current increased largely due to the enhanced hole injection and the higher conductivity of the Si anode; the luminous efficiency decreased significantly due to carrier-induced exciton quenching and the worse charge imbalance. Ultra-thin film of SiO 2 grown on the silicon anode improved the luminous efficiency to a certain extent by restraining the hole injection; enhancing electron injection became more desired.
ISSN:0009-2614
1873-4448
DOI:10.1016/j.cplett.2004.10.147