RF CMOS modeling: a novel empirical large-signal model for an RF-MOSFET
A novel empirical model for large-signal modeling of an RF-MOSFET is proposed. The proposed model is validated in the DC, AC, small-signal and large-signal characteristics of a 32-finger nMOSFET fabricated in SMIC's 0.18 μm RF CMOS technology. The power dissipation caused by self-heating is describe...
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Published in | Journal of semiconductors Vol. 31; no. 4; pp. 52 - 56 |
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Main Author | |
Format | Journal Article |
Language | Chinese English |
Published |
IOP Publishing
01.04.2010
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Subjects | |
Online Access | Get full text |
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Summary: | A novel empirical model for large-signal modeling of an RF-MOSFET is proposed. The proposed model is validated in the DC, AC, small-signal and large-signal characteristics of a 32-finger nMOSFET fabricated in SMIC's 0.18 μm RF CMOS technology. The power dissipation caused by self-heating is described. Excellent agreement is achieved between simulation and measurement for DC, S-parameters (50 MHz-40 GHz), and power characteristics, which shows that our model is accurate and reliable. |
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Bibliography: | self heating TN386 TN386.1 RF-MOSFET RF-MOSFET; large-signal model; self heating 11-5781/TN large-signal model |
ISSN: | 1674-4926 |
DOI: | 10.1088/1674-4926/31/4/044009 |