Low temperature synthesis and field emission characteristics of single to few layered graphene grown using PECVD

• Published in: Applied surface science Vol. 402; pp. 161 - 167
• Main Authors: Kumar, Avshish, Khan, Sunny, Zulfequar, M., Harsh, Husain, Mushahid
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 30.04.2017
• Subjects: Chemical vapor deposition; Emission current; Field emission; Graphene; Scanning probe microscopy; Field emission; Scanning probe microscopy; Emission current; Graphene; Chemical vapor deposition
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/j.apsusc.2017.01.044

•Graphene was synthesized by PECVD system at a low temperature of 600°C.•From different characterization techniques, the presence of single and few layered graphene was confirmed.•X-ray diffraction pattern of the graphene showed single crystalline nature of the film.•The as-grown graphene films were observed extremely good field emitters with long term emission current stability. In this work, high-quality graphene has successfully been synthesized on copper (Cu) coated Silicon (Si) substrate at very large-area by plasma enhanced chemical vapor deposition system. This method is low cost and highly effective for synthesizing graphene relatively at low temperature of 600°C. Electron microscopy images have shown that surface morphology of the grown samples is quite uniform consisting of single layered graphene (SLG) to few layered graphene (FLG). Raman spectra reveal that graphene has been grown with high-quality having negligible defects and the observation of G and G' peaks is also an indicative of stokes phonon energy shift caused due to laser excitation. Scanning probe microscopy image also depicts the synthesis of single to few layered graphene. The field emission characteristics of as-grown graphene samples were studied in a planar diode configuration at room temperature. The graphene samples were observed to be a good field emitter having low turn-on field, higher field amplification factor and long term emission current stability.