Monolayer WS2 based electro-absorption modulator

• Published in: Optical materials Vol. 113; p. 110851
• Main Authors: Huang, Luting, Fan, Guofang, Zhu, Yanan, Wang, Muguang, Cai, Xiaoyu, Wei, Jiasi, Li, Hongyu, Li, Yuan
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.03.2021
• Subjects: Electro-absorption modulator; Modulation bandwidth; Modulation depth; Monolayer WS2; Modulation bandwidth; Modulation depth; Monolayer WS2; Electro-absorption modulator
• ISSN: 0925-3467; 1873-1252
• DOI: 10.1016/j.optmat.2021.110851

Monolayer WS2 electro-absorption modulator (EAM) on GaN waveguide is investigated. By covering monolayer WS2 on top of the optical waveguide and applying different voltages to change the refractive index of WS2, a strong interaction between monolayer WS2 and light is obtained, which leads to a significant change of the imaginary part of effective mode index (EMI) in the waveguide. A systematic and detailed discussion has been presented to describe and design the EAM. Results show that the EAM can achieve 153 GHz 3-dB modulation bandwidth, around 70% modulation depth and lower insertion loss with 10 μm-long active region. These will be helpful for the study of two-dimensional material electro-optic modulator. •Monolayer WS2 electro-absorption modulator we designed an achieve 153 GHz bandwidth, and around 70% modulation depth with 10µm-long active region.•Electro-absorption modulator used Monolayer WS2 is demonstrated for the first time, to our knowledge.•A simulation model is developed for design and analysis of an electro-absorption modulator on 2D material.