Fabrication of CIGS thin films by using spray pyrolysis and post-selenization

• Published in: Journal of the Korean Physical Society Vol. 60; no. 12; pp. 2018 - 2024
• Main Authors: Kim, Seong Yeon, Kim, JunHo
• Format: Journal Article
• Language: English
• Published: Seoul The Korean Physical Society 01.06.2012; 한국물리학회
• Subjects: Mathematical and Computational Physics; Particle and Nuclear Physics; Physics; Physics and Astronomy; Theoretical; 물리학; CIGSe; Ultrasonic spray; Raman; Selenization; XRD; CIGS
• ISSN: 0374-4884; 1976-8524
• DOI: 10.3938/jkps.60.2018

We fabricated Cu(In 1− x Ga x )Se 2 ( x : 0 ∼ 0.4) thin films by using ultrasonic spray pyrolysis and post-selenization. First, we made Cu(In 1− x Ga x )S 2 ( x : 0 ∼ 0.4) films by ultrasonic spray pyrolysis under an air environment. Then, we converted as-sprayed Cu(In 1− x Ga x )S 2 (CIGS) films to Cu-(In 1− x Ga x )Se 2 (CIGSe) films through post-selenization. For all Ga fractions, the sprayed CIGS films were well recrystallized into poly-crystalline CIGSe films with a dominant (112) texture, which was confirmed by X-ray diffraction, Raman spectroscopy and energy dispersive X-ray analyses. This result indicates that CIGSe films with any amount of Ga substitution can be made by converting sprayed CIGS to CIGSe with post-selenization.