Proton Energy Loss in GaN

The proton energy loss in GaN in an energy range between 0 and 65 MeV is investigated. The energy of protons generated by a cyclotron at about 65 MeV is varied by inserting an energy‐absorbing medium of varying thickness. The precise modeling of the GaN Schottky diode response as a function of the a...

Full description

Saved in:
Bibliographic Details
Published inphysica status solidi (b) Vol. 258; no. 8
Main Authors Duboz, Jean-Yves, Zucchi, Julie, Frayssinet, Eric, Chenot, Sébastien, Hugues, Maxime, Grini, Jean-Claude, Hérault, Joël
Format Journal Article
LanguageEnglish
Published Wiley 01.08.2021
Subjects
Bethe theory
energy losses
GaN
Physics
proton GaN
protons
proton GaN
Online AccessGet full text

Cover

More Information
Summary:The proton energy loss in GaN in an energy range between 0 and 65 MeV is investigated. The energy of protons generated by a cyclotron at about 65 MeV is varied by inserting an energy‐absorbing medium of varying thickness. The precise modeling of the GaN Schottky diode response as a function of the absorbing medium thickness allows us to demonstrate that the energy absorption loss in GaN precisely follows the Bethe theory. In addition, the region of the detector contributing to its response to a proton beam, which is of prime importance for proton detector optimization, can be identified. The response of a GaN Schottky diode to protons as a function of their energy (in the 0–15 MeV range in the figure) follows the Bethe theory. The energy of protons is decreased from 65 MeV by inserting an energy‐absorbing medium (poly(methyl methacrylate), PMMA) of increasing thickness.
ISSN:0370-1972
1521-3951
DOI:10.1002/pssb.202100167