Electrodeposition and characterization of thermoelectric Bi2Se3 thin films
Bi2Se3 thin films were electrochemically deposited on Ti and indium tin oxide-coated glass substrates, respectively, at room temperature, using Bi(NO3)3·5H2O and SeO2 as starting materials in diluted HNO3 solution. A conventional three-electrode cell was used with a platinum sheet as a counter elect...
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Published in | International journal of minerals, metallurgy and materials Vol. 17; no. 1; pp. 104 - 107 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
Beijing
University of Science and Technology Beijing
01.02.2010
Springer Nature B.V |
Subjects | |
Online Access | Get full text |
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Summary: | Bi2Se3 thin films were electrochemically deposited on Ti and indium tin oxide-coated glass substrates, respectively, at room temperature, using Bi(NO3)3·5H2O and SeO2 as starting materials in diluted HNO3 solution. A conventional three-electrode cell was used with a platinum sheet as a counter electrode, and a saturated calomel electrode was used as a reference electrode. The films were annealed in argon atmosphere. The influence of cold isostatic pressing before annealing on the microstructure and thermoelectric properties of the films was investigated. X-ray diffraction analysis indicates that the film grown on the indium tin oxide-coated glass substrate is pure rhombohedral Bi2Se3, and the film grown on the Ti substrate consists of both rhombohedral and orthorhombic Bi2Se3. |
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Bibliography: | cold isostafic pressing thermoelectric thin films; bismuth selenide; electrodeposition; thermoelectric properties; cold isostafic pressing thermoelectric properties thermoelectric thin films TQ153.3 electrodeposition bismuth selenide 11-5787/T TB383 ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 1674-4799 1869-103X |
DOI: | 10.1007/s12613-010-0118-x |