Electrodeposition and characterization of thermoelectric Bi2Se3 thin films

Bi2Se3 thin films were electrochemically deposited on Ti and indium tin oxide-coated glass substrates, respectively, at room temperature, using Bi(NO3)3·5H2O and SeO2 as starting materials in diluted HNO3 solution. A conventional three-electrode cell was used with a platinum sheet as a counter elect...

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Bibliographic Details
Published inInternational journal of minerals, metallurgy and materials Vol. 17; no. 1; pp. 104 - 107
Main Authors Li, Xiao-long, Cai, Ke-feng, Li, Hui, Wang, Ling, Zhou, Chi-wei
Format Journal Article
LanguageEnglish
Published Beijing University of Science and Technology Beijing 01.02.2010
Springer Nature B.V
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Summary:Bi2Se3 thin films were electrochemically deposited on Ti and indium tin oxide-coated glass substrates, respectively, at room temperature, using Bi(NO3)3·5H2O and SeO2 as starting materials in diluted HNO3 solution. A conventional three-electrode cell was used with a platinum sheet as a counter electrode, and a saturated calomel electrode was used as a reference electrode. The films were annealed in argon atmosphere. The influence of cold isostatic pressing before annealing on the microstructure and thermoelectric properties of the films was investigated. X-ray diffraction analysis indicates that the film grown on the indium tin oxide-coated glass substrate is pure rhombohedral Bi2Se3, and the film grown on the Ti substrate consists of both rhombohedral and orthorhombic Bi2Se3.
Bibliography:cold isostafic pressing
thermoelectric thin films; bismuth selenide; electrodeposition; thermoelectric properties; cold isostafic pressing
thermoelectric properties
thermoelectric thin films
TQ153.3
electrodeposition
bismuth selenide
11-5787/T
TB383
ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1674-4799
1869-103X
DOI:10.1007/s12613-010-0118-x