Design of broadband class-F power amplifier with high-order harmonic suppression for S-band application

A broadband class-F power amplifier for an S-band handset device is integrated on a 330.82 mm^3 die using an In Ga /GaAs HBT process. With LC serial harmonic traps immersed into the broadband output matching circuit, good harmonic suppression performance can be achieved. A pure resistive impedance o...

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Bibliographic Details
Published inJournal of semiconductors Vol. 36; no. 12; pp. 119 - 123
Main Author 林俊明 章国豪 郑耀华 李思臻 张志浩 陈思弟
Format Journal Article
LanguageEnglish
Published Chinese Institute of Electronics 01.12.2015
Subjects
Broadband
Circuits
class-F
Continuous wave
harmonic suppression
Harmonics
InGaP/GaAs HBT
Matching
power amplifier
Power amplifiers
S-band
Semiconductors
Serials
S波段
功率放大器
匹配电路
宽带
应用
放大器设计
谐波抑制
高阶
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ISSN1674-4926
DOI10.1088/1674-4926/36/12/125002

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Summary:A broadband class-F power amplifier for an S-band handset device is integrated on a 330.82 mm^3 die using an In Ga /GaAs HBT process. With LC serial harmonic traps immersed into the broadband output matching circuit, good harmonic suppression performance can be achieved. A pure resistive impedance of the matching circuit, but near zero at second and infinite at third harmonic frequency, which enhances the efficiency, is obtained across 1.8–2.5 GHz. Tested with a continuous wave（CW） signal, the PA delivers an output power of 34 dBm and achieves a PAE of 57% at 2 GHz. In addition, excellent harmonic suppression levels of less than –53 dBc across the second to fifth harmonic are obtained.
Bibliography:S-band; power amplifier; broadband; class-F; harmonic suppression; InGaP/GaAs HBT
Lin Junming, Zhang Guohao, Zheng Yaohua, Li Sizhen, Zhang Zhihao, Chen Sidi（ Guangdong University of Technology, Guangzhou 510006, China）
A broadband class-F power amplifier for an S-band handset device is integrated on a 330.82 mm^3 die using an In Ga /GaAs HBT process. With LC serial harmonic traps immersed into the broadband output matching circuit, good harmonic suppression performance can be achieved. A pure resistive impedance of the matching circuit, but near zero at second and infinite at third harmonic frequency, which enhances the efficiency, is obtained across 1.8–2.5 GHz. Tested with a continuous wave（CW） signal, the PA delivers an output power of 34 dBm and achieves a PAE of 57% at 2 GHz. In addition, excellent harmonic suppression levels of less than –53 dBc across the second to fifth harmonic are obtained.
11-5781/TN
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ISSN:1674-4926
DOI:10.1088/1674-4926/36/12/125002