Resistivity characteristics near the metal–insulator transition in the half-filled Anderson–Hubbard model

• Published in: Journal of the Korean Physical Society Vol. 85; no. 10; pp. 825 - 829
• Main Authors: Nguyen, Thi-Hai-Yen, Hoang, Anh-Tuan, Le, Duc-Anh
• Format: Journal Article
• Language: English
• Published: Seoul The Korean Physical Society 01.11.2024; Springer Nature B.V; 한국물리학회
• Subjects: Electrical resistivity; Mathematical and Computational Physics; Mean field theory; Metal-insulator transition; Original Paper - Condensed Matter; Particle and Nuclear Physics; Physics; Physics and Astronomy; Theoretical; 물리학; Mott and Anderson metal–insulator transitions; Typical medium theory; Dc resistivity

In this study, we calculate the dc resistivity of the half-filled disordered Hubbard model near the Mott and Anderson metal–insulator transitions. We employ the standard Kubo formula with typical medium dynamical mean field theory to perform our calculations. Our investigation explores the effects o...