Resistivity characteristics near the metal–insulator transition in the half-filled Anderson–Hubbard model

In this study, we calculate the dc resistivity of the half-filled disordered Hubbard model near the Mott and Anderson metal–insulator transitions. We employ the standard Kubo formula with typical medium dynamical mean field theory to perform our calculations. Our investigation explores the effects o...

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Bibliographic Details
Published inJournal of the Korean Physical Society Vol. 85; no. 10; pp. 825 - 829
Main Authors Nguyen, Thi-Hai-Yen, Hoang, Anh-Tuan, Le, Duc-Anh
Format Journal Article
LanguageEnglish
Published Seoul The Korean Physical Society 01.11.2024
Springer Nature B.V
한국물리학회
Subjects
Electrical resistivity
Mathematical and Computational Physics
Mean field theory
Metal-insulator transition
Original Paper - Condensed Matter
Particle and Nuclear Physics
Physics
Physics and Astronomy
Theoretical
물리학
Mott and Anderson metal–insulator transitions
Typical medium theory
Dc resistivity
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Summary:In this study, we calculate the dc resistivity of the half-filled disordered Hubbard model near the Mott and Anderson metal–insulator transitions. We employ the standard Kubo formula with typical medium dynamical mean field theory to perform our calculations. Our investigation explores the effects of random potential, on-site Coulomb interaction, and temperature on the dc resistivity within the model. In addition, we highlight and discuss the distinct resistivity behaviors observed near the Mott and Anderson transitions.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
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content type line 14
ISSN:0374-4884
1976-8524
DOI:10.1007/s40042-024-01186-5