UHV-AFM study of MBE-grown 10 nm scale ridge quantum wires

We evaluate the shape of ridge quantum wires (RQWIs) with nm-scale resolution by using SEM and ultra-high-vacuum (UHV) AFM system which is connected to MBE chamber. This MBE-AFM system provides us a detailed information about the evolution of size and uniformity of ridges grown under various conditi...

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Bibliographic Details
Published inJournal of crystal growth Vol. 175; pp. 804 - 808
Main Authors Koshiba, S., Tanaka, Ichiro, Nakamura, Y., Kamiya, I., Someya, T., Ngo, T., Sakaki, H.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.05.1997
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Summary:We evaluate the shape of ridge quantum wires (RQWIs) with nm-scale resolution by using SEM and ultra-high-vacuum (UHV) AFM system which is connected to MBE chamber. This MBE-AFM system provides us a detailed information about the evolution of size and uniformity of ridges grown under various conditions. In this report, we investigate systematically how the growth temperature T s and As flux affect the width and morphology of GaAs ridge structure. The results show that a very sharp and uniform GaAs ridge structures ( W < 10 nm) can be obtained. On the basis of this understanding, we fabricated the ridge quantum wire of 10 nm width.
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(96)01204-3