UHV-AFM study of MBE-grown 10 nm scale ridge quantum wires

We evaluate the shape of ridge quantum wires (RQWIs) with nm-scale resolution by using SEM and ultra-high-vacuum (UHV) AFM system which is connected to MBE chamber. This MBE-AFM system provides us a detailed information about the evolution of size and uniformity of ridges grown under various conditi...

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Bibliographic Details
Published inJournal of crystal growth Vol. 175; pp. 804 - 808
Main Authors Koshiba, S., Tanaka, Ichiro, Nakamura, Y., Kamiya, I., Someya, T., Ngo, T., Sakaki, H.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.05.1997
Subjects
MBE
Quantum wire
Ridge structure
UHV-AFM
61.16.Ch
MBE
UHV-AFM
Ridge structure
Quantum wire
81.05.Eu
81.15.Hi
68.55.Jk
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Summary:We evaluate the shape of ridge quantum wires (RQWIs) with nm-scale resolution by using SEM and ultra-high-vacuum (UHV) AFM system which is connected to MBE chamber. This MBE-AFM system provides us a detailed information about the evolution of size and uniformity of ridges grown under various conditions. In this report, we investigate systematically how the growth temperature T s and As flux affect the width and morphology of GaAs ridge structure. The results show that a very sharp and uniform GaAs ridge structures ( W < 10 nm) can be obtained. On the basis of this understanding, we fabricated the ridge quantum wire of 10 nm width.
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(96)01204-3