Thermal Resistance Analysis and Simulation of IGBT Module with High Power Density

• Published in: Applied Mechanics and Materials Vol. 303-306; pp. 1902 - 1907
• Main Authors: Dou, Ze Chun, Wu, Yi Bo, Xu, Ning Hua, Liu, Guo You
• Format: Journal Article
• Language: English
• Published: Zurich Trans Tech Publications Ltd 01.02.2013
• Subjects: Equivalent Circuit Model; High Power Density; IGBT Power Module; Thermal Resistance; Finite Element Analysis (FEA)
• ISBN: 3037856521; 9783037856529
• ISSN: 1660-9336; 1662-7482; 1662-7482
• DOI: 10.4028/www.scientific.net/AMM.303-306.1902

As the IGBT power modules have promising potentials in the application of the field of traction or new energy, the higher power density and higher current rating of the IGBT module become more and more attractive. Thermal resistance is one of the most important characteristics in the application of power semiconductor module. A new 1500A/3300V IGBT module in traction application is developed successfully by Zhuzhou CSR Times Electric Co., Ltd (Lincoln). Thermal resistance management of this IGBT module with high power density is performed in this paper. Based on thermal nodes network, an equivalent circuit model for thermal resistance of power module is highlighted from which the steady state thermal resistance can be optimized by theoretical analysis. Furthermore, thermal numerical simulation of 1500A/3300V IGBT module is accomplished by means of finite element model (FEM). Finally, the thermal equivalent model of the IGBT module is verified by simulation results.