Optical emission from excess Si defect centers in Si nanostructures

Four groups of Si nanostructures with and without beta-SiC nanocrystals were fabricated for clarifying the origin of a blue emission with a double-peak structure at 417 and 436 nm. Spectral analyses and microstructural observations show that the blue emission is related to the existence of excess Si...

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Published inPhysical review letters Vol. 91; no. 15; p. 157402
Main Authors Wu, X L, Xiong, S J, Siu, G G, Huang, G S, Mei, Y F, Zhang, Z Y, Deng, S S, Tan, C
Format Journal Article
LanguageEnglish
Published United States 10.10.2003
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Summary:Four groups of Si nanostructures with and without beta-SiC nanocrystals were fabricated for clarifying the origin of a blue emission with a double-peak structure at 417 and 436 nm. Spectral analyses and microstructural observations show that the blue emission is related to the existence of excess Si atoms in these Si nanostructures. The energy levels of electrons in Si nanocrystals with vacancy defects formed from the excess Si atoms are calculated and the characteristics of the obtained density of states coincide with the observed double-peak emission. The present work provides a possible mechanism of the blue emission in various Si nanostructures.
ISSN:0031-9007
DOI:10.1103/PhysRevLett.91.157402