Formation and Control of Hexagonal Pyramid Structures from GaN -Based Pillar-Shaped Structures Using Focused Ion-Beam Process

• Published in: Electronic materials letters Vol. 20; no. 1; pp. 49 - 55
• Main Authors: Ruh, Woon Jae, Choi, Hyeon Jin, Kim, Jong Hoon, Jeon, Seung Woo, Noh, Young-Kyun, Yang, Mino, Kim, Young Heon
• Format: Journal Article
• Language: English
• Published: Seoul The Korean Institute of Metals and Materials 2024; Springer Nature B.V; 대한금속·재료학회
• Subjects: Characterization and Evaluation of Materials; Chemistry and Materials Science; Condensed Matter Physics; Controllability; Gallium nitrides; Ion beams; Ion bombardment; Magnetics and Photonics; Materials Science; Nanotechnology; Nanotechnology and Microengineering; Optical and Electronic Materials; Optoelectronic devices; Original Article - Electronics; Pyramids; Quantum efficiency; Sputtering; 전자/정보통신공학; Optoelectronic device; Hexagonal pyramid; GaN-based semiconductor; Pillar structure; Focused ion-beam milling

The formation of controllable 3D structures on the surface of layered optoelectronic devices using GaN-based semiconductors is important for improving the external quantum efficiency by enhancing the light-emitting efficiency. In this study, as-grown short hexagonal pillar structures on GaN-based se...