Formation and Control of Hexagonal Pyramid Structures from GaN -Based Pillar-Shaped Structures Using Focused Ion-Beam Process

• Published in: Electronic materials letters Vol. 20; no. 1; pp. 49 - 55
• Main Authors: Ruh, Woon Jae, Choi, Hyeon Jin, Kim, Jong Hoon, Jeon, Seung Woo, Noh, Young-Kyun, Yang, Mino, Kim, Young Heon
• Format: Journal Article
• Language: English
• Published: Seoul The Korean Institute of Metals and Materials 2024; Springer Nature B.V; 대한금속·재료학회
• Subjects: Characterization and Evaluation of Materials; Chemistry and Materials Science; Condensed Matter Physics; Controllability; Gallium nitrides; Ion beams; Ion bombardment; Magnetics and Photonics; Materials Science; Nanotechnology; Nanotechnology and Microengineering; Optical and Electronic Materials; Optoelectronic devices; Original Article - Electronics; Pyramids; Quantum efficiency; Sputtering; 전자/정보통신공학; Optoelectronic device; Hexagonal pyramid; GaN-based semiconductor; Pillar structure; Focused ion-beam milling
• ISSN: 1738-8090; 2093-6788
• DOI: 10.1007/s13391-023-00435-2

The formation of controllable 3D structures on the surface of layered optoelectronic devices using GaN-based semiconductors is important for improving the external quantum efficiency by enhancing the light-emitting efficiency. In this study, as-grown short hexagonal pillar structures on GaN-based semiconductors were transformed into a hexagonal pyramid shape during a focused ion-beam process. After forming the hexagonal pyramid shape, it was found that the size of the hexagonal pyramid can be adjusted by varying the sputtering time while preserving the pyramid shape. The transformation of the as-grown pillar structures to 3D hexagonal pyramids was demonstrated by analyzing the morphological evolution with the sputtering time by simulating the FIB process and calculating the effective ion bombardment area during sputtering. Graphical Abstract