Formation and Control of Hexagonal Pyramid Structures from GaN -Based Pillar-Shaped Structures Using Focused Ion-Beam Process
The formation of controllable 3D structures on the surface of layered optoelectronic devices using GaN-based semiconductors is important for improving the external quantum efficiency by enhancing the light-emitting efficiency. In this study, as-grown short hexagonal pillar structures on GaN-based se...
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| Published in | Electronic materials letters Vol. 20; no. 1; pp. 49 - 55 |
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| Main Authors | , , , , , , |
| Format | Journal Article |
| Language | English |
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Seoul
The Korean Institute of Metals and Materials
2024
Springer Nature B.V 대한금속·재료학회 |
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| Abstract | The formation of controllable 3D structures on the surface of layered optoelectronic devices using GaN-based semiconductors is important for improving the external quantum efficiency by enhancing the light-emitting efficiency. In this study, as-grown short hexagonal pillar structures on GaN-based semiconductors were transformed into a hexagonal pyramid shape during a focused ion-beam process. After forming the hexagonal pyramid shape, it was found that the size of the hexagonal pyramid can be adjusted by varying the sputtering time while preserving the pyramid shape. The transformation of the as-grown pillar structures to 3D hexagonal pyramids was demonstrated by analyzing the morphological evolution with the sputtering time by simulating the FIB process and calculating the effective ion bombardment area during sputtering.
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| AbstractList | The formation of controllable 3D structures on the surface of layered optoelectronic devices using GaN-based semiconductors is important for improving the external quantum efficiency by enhancing the light-emitting efficiency. In this study, as-grown short hexagonal pillar structures on GaN-based semiconductors were transformed into a hexagonal pyramid shape during a focused ion-beam process. After forming the hexagonal pyramid shape, it was found that the size of the hexagonal pyramid can be adjusted by varying the sputtering time while preserving the pyramid shape. The transformation of the as-grown pillar structures to 3D hexagonal pyramids was demonstrated by analyzing the morphological evolution with the sputtering time by simulating the FIB process and calculating the effective ion bombardment area during sputtering. The formation of controllable 3D structures on the surface of layered optoelectronic devices using GaN-basedsemiconductors is important for improving the external quantum effi ciency by enhancing the light-emitting effi ciency. Inthis study, as-grown short hexagonal pillar structures on GaN-based semiconductors were transformed into a hexagonalpyramid shape during a focused ion-beam process. After forming the hexagonal pyramid shape, it was found that the size ofthe hexagonal pyramid can be adjusted by varying the sputtering time while preserving the pyramid shape. The transformationof the as-grown pillar structures to 3D hexagonal pyramids was demonstrated by analyzing the morphological evolutionwith the sputtering time by simulating the FIB process and calculating the eff ective ion bombardment area during sputtering. KCI Citation Count: 0 The formation of controllable 3D structures on the surface of layered optoelectronic devices using GaN-based semiconductors is important for improving the external quantum efficiency by enhancing the light-emitting efficiency. In this study, as-grown short hexagonal pillar structures on GaN-based semiconductors were transformed into a hexagonal pyramid shape during a focused ion-beam process. After forming the hexagonal pyramid shape, it was found that the size of the hexagonal pyramid can be adjusted by varying the sputtering time while preserving the pyramid shape. The transformation of the as-grown pillar structures to 3D hexagonal pyramids was demonstrated by analyzing the morphological evolution with the sputtering time by simulating the FIB process and calculating the effective ion bombardment area during sputtering. Graphical Abstract |
| Author | Yang, Mino Choi, Hyeon Jin Jeon, Seung Woo Kim, Young Heon Kim, Jong Hoon Noh, Young-Kyun Ruh, Woon Jae |
| Author_xml | – sequence: 1 givenname: Woon Jae surname: Ruh fullname: Ruh, Woon Jae organization: Graduate School of Analytical Science and Technology, Chungnam National University – sequence: 2 givenname: Hyeon Jin surname: Choi fullname: Choi, Hyeon Jin organization: Graduate School of Analytical Science and Technology, Chungnam National University – sequence: 3 givenname: Jong Hoon surname: Kim fullname: Kim, Jong Hoon organization: Graduate School of Analytical Science and Technology, Chungnam National University – sequence: 4 givenname: Seung Woo surname: Jeon fullname: Jeon, Seung Woo organization: Graduate School of Analytical Science and Technology, Chungnam National University – sequence: 5 givenname: Young-Kyun surname: Noh fullname: Noh, Young-Kyun organization: IVWorks Co – sequence: 6 givenname: Mino surname: Yang fullname: Yang, Mino organization: Korea Basic Science Institute Seoul – sequence: 7 givenname: Young Heon orcidid: 0000-0001-9944-5859 surname: Kim fullname: Kim, Young Heon email: y.h.kim@cnu.ac.kr organization: Graduate School of Analytical Science and Technology, Chungnam National University |
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| Cites_doi | 10.1002/pssa.200880961 10.1007/s11164-016-2430-1 10.1016/j.mee.2007.11.009 10.1016/j.matdes.2022.110563 10.1116/1.4954986 10.1016/j.nimb.2010.02.091 10.1039/d0nr07539f 10.3365/eml.2010.06.051 10.1116/1.3480344 10.1063/1.1499753 10.3365/eml.2009.06.083 10.1364/oe.15.006670 10.1364/oe.20.00a630 10.1063/1.2770662 10.1016/j.jcrysgro.2020.125868 10.1002/(SICI)1521-396X(199911)176:1<355::AID-PSSA355>3.0.CO;2-I 10.1007/s13391-012-2025-y 10.1063/1.1571962 10.1364/acp.2009.tun1 10.1515/nanoph-2018-0117 10.1016/j.jcrysgro.2015.06.007 10.1007/s13391-012-1074-6 10.1016/j.matlet.2018.04.089 10.1063/1.110575 10.1109/LPT.2015.2500272 10.1016/j.mser.2004.11.002 10.1143/APEX.1.051101 10.1063/1.1384906 10.1007/s42452-020-2456-2 10.1063/1.1397758 10.2174/1877611601002010051 10.1088/0957-4484/19/05/055301 |
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| Keywords | Optoelectronic device Hexagonal pyramid GaN-based semiconductor Pillar structure Focused ion-beam milling |
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| References | Windisch, Rooman, Meinlschmidt (CR12) 2001; 79 Liu, Wang, Xia (CR18) 2016; 34 Dai, Kang, Zhang (CR22) 2008; 85 Ki, Kwak, Lee (CR2) 2009; 5 Pan, Wang (CR9) 2012; 20 Cheng, Lu, Ke (CR14) 2009; 15 Hirayama, Noguchi, Yatabe, Kamata (CR6) 2008; 1 Schnitzer, Yablonovitch, Caneau (CR11) 1993; 63 Zhuang, Edgar (CR16) 2005; 48 Ziegler, Ziegler, Biersack (CR29) 2010; 268 Huang, Yeh, Huang (CR15) 2016; 28 CR31 Martyniuk, Parish, Marchand (CR8) 2012; 8 Li, Chen, Dai (CR27) 2021; 13 Lin, Fang, Liu (CR30) 2022; 216 Park, Park, Lee, Choi (CR26) 2010; 2 Cho, Yoon, Park (CR3) 2010; 6 Kawamura, Akiyama, Kitamoto (CR25) 2020; 549 Matsuoka, Okamoto, Nakao (CR1) 2002; 81 Chen, Lin, Hu (CR17) 2015; 426 Li, Liu (CR20) 2018; 7 Despiau-Pujo, Chabert (CR32) 2010; 28 Kuball, Morrissey, Benyoucef (CR21) 1999; 176 Hirayama, Yatabe, Noguchi (CR5) 2007; 91 Tong, Jia, Fan (CR24) 2018; 224 Hirayama, Fujikawa, Noguchi (CR7) 2009; 206 Cho, Lee, Yang, Kim (CR23) 2001; 79 Chen, Ren, Zhu (CR28) 2020; 2 Huh, Lee, Kang, Park (CR13) 2003; 93 Lai, Hsu, Chang (CR19) 2017; 43 Lee, Gao, Chien, Sun (CR4) 2007; 15 Jung, Seong (CR10) 2012; 8 H Hirayama (435_CR6) 2008; 1 G Tong (435_CR24) 2018; 224 JF Ziegler (435_CR29) 2010; 268 R Windisch (435_CR12) 2001; 79 H Hirayama (435_CR5) 2007; 91 M Martyniuk (435_CR8) 2012; 8 C Huh (435_CR13) 2003; 93 W Chen (435_CR17) 2015; 426 T Matsuoka (435_CR1) 2002; 81 T Kawamura (435_CR25) 2020; 549 HK Cho (435_CR23) 2001; 79 T-X Lee (435_CR4) 2007; 15 E Despiau-Pujo (435_CR32) 2010; 28 YY Lai (435_CR19) 2017; 43 J Li (435_CR20) 2018; 7 SY Jung (435_CR10) 2012; 8 J-W Pan (435_CR9) 2012; 20 YW Cheng (435_CR14) 2009; 15 KH Ki (435_CR2) 2009; 5 Y Park (435_CR26) 2010; 2 M Kuball (435_CR21) 1999; 176 I Schnitzer (435_CR11) 1993; 63 P Li (435_CR27) 2021; 13 435_CR31 YT Huang (435_CR15) 2016; 28 X Lin (435_CR30) 2022; 216 Z Liu (435_CR18) 2016; 34 H Hirayama (435_CR7) 2009; 206 D Zhuang (435_CR16) 2005; 48 T Dai (435_CR22) 2008; 85 J Cho (435_CR3) 2010; 6 X Chen (435_CR28) 2020; 2 |
| References_xml | – volume: 206 start-page: 1176 year: 2009 end-page: 1182 ident: CR7 article-title: 222–282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire publication-title: Phys. Status Solidi Appl. Mater. Sci doi: 10.1002/pssa.200880961 contributor: fullname: Noguchi – volume: 43 start-page: 3563 year: 2017 end-page: 3572 ident: CR19 article-title: The study of wet etching on GaN surface by potassium hydroxide solution publication-title: Res. Chem. Intermed doi: 10.1007/s11164-016-2430-1 contributor: fullname: Chang – volume: 85 start-page: 640 year: 2008 end-page: 645 ident: CR22 article-title: Study and formation of 2D microstructures of sapphire by focused ion beam milling publication-title: Microelectron. Eng doi: 10.1016/j.mee.2007.11.009 contributor: fullname: Zhang – volume: 216 start-page: 110563 year: 2022 ident: CR30 article-title: Characterization and simulation of sputtering etched profile by focused gallium ion beam on GaN substrate publication-title: Mater. Des doi: 10.1016/j.matdes.2022.110563 contributor: fullname: Liu – volume: 34 start-page: 041226 year: 2016 ident: CR18 article-title: Fabrication of GaN hexagonal cones by inductively coupled plasma reactive ion etching publication-title: J. Vac Sci. Technol. B Nanotechnol Microelectron. Mater. Process. Meas. Phenom doi: 10.1116/1.4954986 contributor: fullname: Xia – volume: 268 start-page: 1818 year: 2010 end-page: 1823 ident: CR29 article-title: SRIM–The stopping and range of ions in matter publication-title: Nucl. Instruments Methods Phys. Res. Sect. B doi: 10.1016/j.nimb.2010.02.091 contributor: fullname: Biersack – volume: 13 start-page: 1529 year: 2021 end-page: 1565 ident: CR27 article-title: Recent advances in focused ion beam nanofabrication for nanostructures and devices: Fundamentals and applications publication-title: Nanoscale doi: 10.1039/d0nr07539f contributor: fullname: Dai – volume: 6 start-page: 51 year: 2010 end-page: 53 ident: CR3 article-title: Characteristics of blue and ultraviolet light-emitting diodes with current density and temperature publication-title: Electron. Mater. Lett doi: 10.3365/eml.2010.06.051 contributor: fullname: Park – volume: 28 start-page: 1263 year: 2010 end-page: 1268 ident: CR32 article-title: Low energy ar + bombardment of GaN surfaces: A statistical study of ion reflection and sputtering publication-title: J. Vac Sci. Technol. A Vacuum Surfaces Film doi: 10.1116/1.3480344 contributor: fullname: Chabert – volume: 81 start-page: 1246 year: 2002 end-page: 1248 ident: CR1 article-title: Optical bandgap energy of wurtzite InN publication-title: Appl. Phys. Lett doi: 10.1063/1.1499753 contributor: fullname: Nakao – volume: 5 start-page: 83 year: 2009 end-page: 86 ident: CR2 article-title: Fabrication and properties of AlN Film on GaN substrate by using remote plasma atomic layer deposition method publication-title: Electron. Mater. Lett doi: 10.3365/eml.2009.06.083 contributor: fullname: Lee – volume: 15 start-page: 6670 year: 2007 ident: CR4 article-title: Light extraction analysis of GaN-based light-emitting diodes with surface texture and/or patterned substrate publication-title: Opt. Express doi: 10.1364/oe.15.006670 contributor: fullname: Sun – volume: 20 start-page: A630 year: 2012 ident: CR9 article-title: Light extraction efficiency of GaN-based LED with pyramid texture by using ray path analysis publication-title: Opt. Express doi: 10.1364/oe.20.00a630 contributor: fullname: Wang – volume: 91 start-page: 1 year: 2007 end-page: 4 ident: CR5 article-title: 231–261 nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire publication-title: Appl. Phys. Lett doi: 10.1063/1.2770662 contributor: fullname: Noguchi – volume: 549 start-page: 125868 year: 2020 ident: CR25 article-title: Absolute surface energies of oxygen-adsorbed GaN surfaces publication-title: J. Cryst. Growth doi: 10.1016/j.jcrysgro.2020.125868 contributor: fullname: Kitamoto – volume: 176 start-page: 355 year: 1999 end-page: 358 ident: CR21 article-title: Nano-fabrication of GaN pillars using focused ion beam etching publication-title: Phys. Status Solidi Appl. Res doi: 10.1002/(SICI)1521-396X(199911)176:1<355::AID-PSSA355>3.0.CO;2-I contributor: fullname: Benyoucef – volume: 8 start-page: 549 year: 2012 end-page: 552 ident: CR10 article-title: Improved light output power of GaN-based flip-chip light-emitting diode through SiO2 cones publication-title: Electron. Mater. Lett doi: 10.1007/s13391-012-2025-y contributor: fullname: Seong – volume: 93 start-page: 9383 year: 2003 end-page: 9385 ident: CR13 article-title: Improved light-output and electrical performance of InGaN-based light-emitting diode by microroughening of the p-GaN surface publication-title: J. Appl. Phys doi: 10.1063/1.1571962 contributor: fullname: Park – volume: 15 start-page: 1242 year: 2009 end-page: 1249 ident: CR14 article-title: Application of nanosphere lithography to the fabrication of nanorod LEDs and to the performance enhancement of conventional LEDs publication-title: Opt. InfoBase Conf. Pap doi: 10.1364/acp.2009.tun1 contributor: fullname: Ke – volume: 7 start-page: 1637 year: 2018 end-page: 1650 ident: CR20 article-title: Focused-ion-beam-based nano-kirigami: From art to photonics publication-title: Nanophotonics doi: 10.1515/nanoph-2018-0117 contributor: fullname: Liu – volume: 426 start-page: 168 year: 2015 end-page: 172 ident: CR17 article-title: GaN nanowire fabricated by selective wet-etching of GaN micro truncated-pyramid publication-title: J. Cryst. Growth doi: 10.1016/j.jcrysgro.2015.06.007 contributor: fullname: Hu – ident: CR31 – volume: 8 start-page: 111 year: 2012 end-page: 115 ident: CR8 article-title: Nanoindentation of laterally overgrown epitaxial gallium nitride publication-title: Electron. Mater. Lett doi: 10.1007/s13391-012-1074-6 contributor: fullname: Marchand – volume: 224 start-page: 86 year: 2018 end-page: 88 ident: CR24 article-title: Growth and optical properties of GaN pyramids using in-situ deposited SiNx layer publication-title: Mater. Lett doi: 10.1016/j.matlet.2018.04.089 contributor: fullname: Fan – volume: 63 start-page: 2174 year: 1993 end-page: 2176 ident: CR11 article-title: 30% external Quantum Efficiency from Surface Textured, Thin-Film light-emitting diodes publication-title: Appl. Phys. Lett doi: 10.1063/1.110575 contributor: fullname: Caneau – volume: 28 start-page: 605 year: 2016 end-page: 608 ident: CR15 article-title: High-performance InGaN p-i-n photodetectors using LED structure and surface texturing publication-title: IEEE Photonics Technol Lett doi: 10.1109/LPT.2015.2500272 contributor: fullname: Huang – volume: 48 start-page: 1 year: 2005 end-page: 46 ident: CR16 article-title: Wet etching of GaN, AlN, and SiC: A review publication-title: Mater. Sci. Eng. R Reports doi: 10.1016/j.mser.2004.11.002 contributor: fullname: Edgar – volume: 1 start-page: 0511011 year: 2008 end-page: 0511013 ident: CR6 article-title: 227 nm AlGaN light-emitting diode with 0.15 mW output power realized using a thin quantum well and AIN buffer with reduced threading dislocation density publication-title: Appl. Phys. Express doi: 10.1143/APEX.1.051101 contributor: fullname: Kamata – volume: 79 start-page: 215 year: 2001 end-page: 217 ident: CR23 article-title: Formation mechanism of V defects in the InGaN/GaN multiple quantum wells grown on GaN layers with low threading dislocation density publication-title: Appl. Phys. Lett doi: 10.1063/1.1384906 contributor: fullname: Kim – volume: 2 start-page: 1 year: 2020 end-page: 16 ident: CR28 article-title: Formation mechanism and compensation methods of profile error in focused ion beam milling of three-dimensional optical microstructures publication-title: SN Appl. Sci doi: 10.1007/s42452-020-2456-2 contributor: fullname: Zhu – volume: 79 start-page: 2315 year: 2001 end-page: 2317 ident: CR12 article-title: Impact of texture-enhanced transmission on high-efficiency surface-textured light-emitting diodes publication-title: Appl. Phys. Lett doi: 10.1063/1.1397758 contributor: fullname: Meinlschmidt – volume: 2 start-page: 51 year: 2010 end-page: 58 ident: CR26 article-title: Nano-Scale lateral milling with focused Ion Beam for Ultra-Smooth Optical device surface publication-title: Recent Pat. Sp Technol doi: 10.2174/1877611601002010051 contributor: fullname: Choi – volume: 79 start-page: 215 year: 2001 ident: 435_CR23 publication-title: Appl. Phys. Lett doi: 10.1063/1.1384906 contributor: fullname: HK Cho – volume: 6 start-page: 51 year: 2010 ident: 435_CR3 publication-title: Electron. Mater. Lett doi: 10.3365/eml.2010.06.051 contributor: fullname: J Cho – volume: 2 start-page: 51 year: 2010 ident: 435_CR26 publication-title: Recent Pat. Sp Technol doi: 10.2174/1877611601002010051 contributor: fullname: Y Park – volume: 81 start-page: 1246 year: 2002 ident: 435_CR1 publication-title: Appl. Phys. Lett doi: 10.1063/1.1499753 contributor: fullname: T Matsuoka – volume: 28 start-page: 605 year: 2016 ident: 435_CR15 publication-title: IEEE Photonics Technol Lett doi: 10.1109/LPT.2015.2500272 contributor: fullname: YT Huang – volume: 268 start-page: 1818 year: 2010 ident: 435_CR29 publication-title: Nucl. Instruments Methods Phys. Res. Sect. B doi: 10.1016/j.nimb.2010.02.091 contributor: fullname: JF Ziegler – volume: 13 start-page: 1529 year: 2021 ident: 435_CR27 publication-title: Nanoscale doi: 10.1039/d0nr07539f contributor: fullname: P Li – volume: 2 start-page: 1 year: 2020 ident: 435_CR28 publication-title: SN Appl. Sci doi: 10.1007/s42452-020-2456-2 contributor: fullname: X Chen – volume: 93 start-page: 9383 year: 2003 ident: 435_CR13 publication-title: J. Appl. Phys doi: 10.1063/1.1571962 contributor: fullname: C Huh – volume: 20 start-page: A630 year: 2012 ident: 435_CR9 publication-title: Opt. Express doi: 10.1364/oe.20.00a630 contributor: fullname: J-W Pan – volume: 34 start-page: 041226 year: 2016 ident: 435_CR18 publication-title: J. Vac Sci. Technol. B Nanotechnol Microelectron. Mater. Process. Meas. Phenom doi: 10.1116/1.4954986 contributor: fullname: Z Liu – volume: 549 start-page: 125868 year: 2020 ident: 435_CR25 publication-title: J. Cryst. Growth doi: 10.1016/j.jcrysgro.2020.125868 contributor: fullname: T Kawamura – ident: 435_CR31 doi: 10.1088/0957-4484/19/05/055301 – volume: 43 start-page: 3563 year: 2017 ident: 435_CR19 publication-title: Res. Chem. Intermed doi: 10.1007/s11164-016-2430-1 contributor: fullname: YY Lai – volume: 63 start-page: 2174 year: 1993 ident: 435_CR11 publication-title: Appl. Phys. Lett doi: 10.1063/1.110575 contributor: fullname: I Schnitzer – volume: 48 start-page: 1 year: 2005 ident: 435_CR16 publication-title: Mater. Sci. Eng. R Reports doi: 10.1016/j.mser.2004.11.002 contributor: fullname: D Zhuang – volume: 176 start-page: 355 year: 1999 ident: 435_CR21 publication-title: Phys. Status Solidi Appl. Res doi: 10.1002/(SICI)1521-396X(199911)176:1<355::AID-PSSA355>3.0.CO;2-I contributor: fullname: M Kuball – volume: 91 start-page: 1 year: 2007 ident: 435_CR5 publication-title: Appl. Phys. Lett doi: 10.1063/1.2770662 contributor: fullname: H Hirayama – volume: 79 start-page: 2315 year: 2001 ident: 435_CR12 publication-title: Appl. Phys. Lett doi: 10.1063/1.1397758 contributor: fullname: R Windisch – volume: 8 start-page: 549 year: 2012 ident: 435_CR10 publication-title: Electron. Mater. Lett doi: 10.1007/s13391-012-2025-y contributor: fullname: SY Jung – volume: 7 start-page: 1637 year: 2018 ident: 435_CR20 publication-title: Nanophotonics doi: 10.1515/nanoph-2018-0117 contributor: fullname: J Li – volume: 28 start-page: 1263 year: 2010 ident: 435_CR32 publication-title: J. Vac Sci. Technol. A Vacuum Surfaces Film doi: 10.1116/1.3480344 contributor: fullname: E Despiau-Pujo – volume: 15 start-page: 6670 year: 2007 ident: 435_CR4 publication-title: Opt. Express doi: 10.1364/oe.15.006670 contributor: fullname: T-X Lee – volume: 1 start-page: 0511011 year: 2008 ident: 435_CR6 publication-title: Appl. Phys. Express doi: 10.1143/APEX.1.051101 contributor: fullname: H Hirayama – volume: 206 start-page: 1176 year: 2009 ident: 435_CR7 publication-title: Phys. Status Solidi Appl. Mater. Sci doi: 10.1002/pssa.200880961 contributor: fullname: H Hirayama – volume: 5 start-page: 83 year: 2009 ident: 435_CR2 publication-title: Electron. Mater. Lett doi: 10.3365/eml.2009.06.083 contributor: fullname: KH Ki – volume: 8 start-page: 111 year: 2012 ident: 435_CR8 publication-title: Electron. Mater. Lett doi: 10.1007/s13391-012-1074-6 contributor: fullname: M Martyniuk – volume: 216 start-page: 110563 year: 2022 ident: 435_CR30 publication-title: Mater. Des doi: 10.1016/j.matdes.2022.110563 contributor: fullname: X Lin – volume: 426 start-page: 168 year: 2015 ident: 435_CR17 publication-title: J. Cryst. Growth doi: 10.1016/j.jcrysgro.2015.06.007 contributor: fullname: W Chen – volume: 15 start-page: 1242 year: 2009 ident: 435_CR14 publication-title: Opt. InfoBase Conf. Pap doi: 10.1364/acp.2009.tun1 contributor: fullname: YW Cheng – volume: 85 start-page: 640 year: 2008 ident: 435_CR22 publication-title: Microelectron. Eng doi: 10.1016/j.mee.2007.11.009 contributor: fullname: T Dai – volume: 224 start-page: 86 year: 2018 ident: 435_CR24 publication-title: Mater. Lett doi: 10.1016/j.matlet.2018.04.089 contributor: fullname: G Tong |
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| Snippet | The formation of controllable 3D structures on the surface of layered optoelectronic devices using GaN-based semiconductors is important for improving the... The formation of controllable 3D structures on the surface of layered optoelectronic devices using GaN-basedsemiconductors is important for improving the... |
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| SubjectTerms | Characterization and Evaluation of Materials Chemistry and Materials Science Condensed Matter Physics Controllability Gallium nitrides Ion beams Ion bombardment Magnetics and Photonics Materials Science Nanotechnology Nanotechnology and Microengineering Optical and Electronic Materials Optoelectronic devices Original Article - Electronics Pyramids Quantum efficiency Sputtering 전자/정보통신공학 |
| Title | Formation and Control of Hexagonal Pyramid Structures from GaN -Based Pillar-Shaped Structures Using Focused Ion-Beam Process |
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