High Er3+ luminescent efficiency in Er-doped SiOx films containing amorphous Si nanodots

Er-doped SiO1.87 films containing amorphous Si nanodots were deposited and heat-treated at the two temperatures 950 and 1100 °C. On the basis of morphological observations, structural characterizations and optical measurements it is concluded that the heat-treatment at 1100 °C results in a 3-fold hi...

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Bibliographic Details
Published inJournal of alloys and compounds Vol. 676; pp. 428 - 431
Main Authors Lu, Ying-Wei, Huang, Chao, Cheng, Ji-Gui, Larsen, Arne Nylandsted
Format Journal Article
LanguageEnglish
Published Elsevier B.V 15.08.2016
Subjects
Er ions
Luminescent efficiency
Photoluminescence
Si-O-Er complex
Si-O-Er complex
Luminescent efficiency
Er ions
Photoluminescence
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Summary:Er-doped SiO1.87 films containing amorphous Si nanodots were deposited and heat-treated at the two temperatures 950 and 1100 °C. On the basis of morphological observations, structural characterizations and optical measurements it is concluded that the heat-treatment at 1100 °C results in a 3-fold higher Er3+ luminescent efficiency than the one at 950 °C due to the formation of SiOEr complex rather than the nature of sensitizers. •Intense emission at 1.5 μm from Er ions is excited by amorphous Si nanodots.•The crystallinities of Si nanodots in two different annealed-samples are same.•The SiOEr complex results in the higher luminescent efficiency for Er ions.
ISSN:0925-8388
1873-4669
DOI:10.1016/j.jallcom.2016.03.184