Photoelectric properties of p +-n junctions based on 4H-SiC ion-implanted with aluminum

The photoelectric properties of p(+)-n junctions that were based on 4H-SiC ion-implanted with aluminum and were formed in lightly doped n-type epitaxial layers grown by chemical vapor deposition were studied. It is shown that such photodetectors combine in full measure the advantages of photostructu...

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Published inSemiconductors (Woodbury, N.Y.) Vol. 36; no. 6; pp. 706 - 709
Main Authors Violina, G. N., Kalinina, E. V., Kholujanov, G. F., Onushkin, G. A., Kossov, V. G., Yafaev, R. R., Hallén, A., Konstantinov, A. O.
Format Journal Article
LanguageEnglish
Published 01.01.2002
Subjects
uv photodiodes
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Summary:The photoelectric properties of p(+)-n junctions that were based on 4H-SiC ion-implanted with aluminum and were formed in lightly doped n-type epitaxial layers grown by chemical vapor deposition were studied. It is shown that such photodetectors combine in full measure the advantages of photostructures formed on the basis of Schottky barriers and epitaxial p-n junctions. The results of the theoretical calculation of spectral characteristics of ion-implanted photodetectors are in good agreement with experimental data. The structures feature an efficiency of collection of nonequilibrium charge carriers close to 100% in the spectral range of the photon energies of 3.5-4.25 eV.
ISSN:1063-7826
1090-6479
1090-6479
DOI:10.1134/1.1485675