Improved Performance of InGaN/GaN Light-Emitting Diodes With Thin Intermediate Barriers

In this work, the performance of blue InGaN/GaN light-emitting diodes (LEDs) with thin intermediate barriers at high injection current is investigated. From the experimental results, it is found that the performance of LEDs with intermediate 5-nm-thick barriers is improved about 15% at 200 mA, compa...

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Bibliographic Details
Published inIEEE photonics technology letters Vol. 23; no. 22; pp. 1682 - 1684
Main Authors Chen, Bo-Chun, Chang, Chun-Yen, Fu, Yi-Keng, Huang, Kai-Feng, Lu, Yu-Hsuan, Su, Yan-Kuin
Format Journal Article
LanguageEnglish
Published IEEE 15.11.2011
Subjects
Charge carrier processes
Color
Efficiency droop
Gallium nitride
internal quantum efficiency
Light emitting diodes
light-emitting diodes (LEDs)
Power generation
Radiative recombination
Transportation
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Summary:In this work, the performance of blue InGaN/GaN light-emitting diodes (LEDs) with thin intermediate barriers at high injection current is investigated. From the experimental results, it is found that the performance of LEDs with intermediate 5-nm-thick barriers is improved about 15% at 200 mA, compared with the sample with unique 9-nm-thick barriers. A numerical study is executed to analyze the hole distributions in the quantum wells. From the simulated results, it is found that the hole injection efficiency can be improved at high injection current. Hence, the effective recombination of electron and hole is also enhanced at high injection current.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2011.2166540