Growth and Characterization of Heteroepitaxial Layers of GeSiSn Ternary Alloy

We have examined the epitaxial growth of Ge1-x-ySixSny layers on Ge substrates with a Sn content of 3~15% with low temperature molecular beam epitaxy method. The Ge1-x-ySixSny layers are psuedomorphically grown on Ge substrates with high crystalline quality. The surface morphology of the Ge1-x-ySixS...

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Bibliographic Details
Published inECS transactions Vol. 50; no. 9; pp. 907 - 913
Main Authors Yamaha, Takashi, Nakatsuka, Osamu, Takeuchi, Shotaro, Takeuchi, Wakana, Taoka, Noriyuki, Araki, Koji, Izunome, Koji, Zaima, Shigeaki
Format Journal Article
LanguageEnglish
Published 15.03.2013
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Summary:We have examined the epitaxial growth of Ge1-x-ySixSny layers on Ge substrates with a Sn content of 3~15% with low temperature molecular beam epitaxy method. The Ge1-x-ySixSny layers are psuedomorphically grown on Ge substrates with high crystalline quality. The surface morphology of the Ge1-x-ySixSny layers with a Sn content below 7% shows very flat and uniform, although surface roughening occurs in the sample with a Sn content as high as 15% provably due to the Sn precipitation. We also roughly estimated the energy band structure with liner approximation calculation. The energy bandgap of Ge1-x-ySixSny alloy prepared in this study is expected to be 0.8~1.0 eV at the L or X point.
ISSN:1938-5862
1938-6737
DOI:10.1149/05009.0907ecst