Samarium-Doped Ceria Nanospheres Prepared via Solvothermal Method and the Chemical Mechanical Polishing Properties

• Published in: Electronic materials letters Vol. 21; no. 2; pp. 252 - 259
• Main Authors: Wang, Zhenyang, Wang, Tongqing, Lu, Xinchun
• Format: Journal Article
• Language: English
• Published: Seoul The Korean Institute of Metals and Materials 01.03.2025; Springer Nature B.V; 대한금속·재료학회
• Subjects: Cerium oxides; Characterization and Evaluation of Materials; Chemical-mechanical polishing; Chemistry and Materials Science; Condensed Matter Physics; Dielectrics; Doping; Material removal rate (machining); Materials Science; Nanospheres; Nanotechnology; Nanotechnology and Microengineering; Optical and Electronic Materials; Original Article– Nanomaterials; Samarium; Silicon nitride; Silicon oxides; 전자/정보통신공학; Samarium-doped ceria; Chemical mechanical polishing; Selection ratio; Ceria nanosphere
• ISSN: 1738-8090; 2093-6788
• DOI: 10.1007/s13391-024-00537-5

As a crucial abrasive in chemical mechanical polishing (CMP), ceria has garnered significant attention regarding its preparation method and surface modification methods. This research investigates the properties for samarium-doped ceria nanospheres prepared via the solvothermal method and their CMP performance on dielectric materials. Ceria nanospheres with various Sm doping concentrations were synthesized using a surfactant-assisted solvothermal method. Doping increased the ratio of Ce 3+ to Ce 4+ and oxygen vacancy in ceria. While, Sm doping reduced the overall amount of Ce, resulting in a decrease in the material removal rate (MRR) of silicon oxide, and an initial decrease followed by an increase in the MRR of silicon nitride. The Ce 0.95 Sm 0.05 O 2 suspension exhibited better material removal selectivity than pristine ceria nanospheres, with an increase in the selection ratio from 7:1 to 25:1. Graphical Abstract