High-temperature operation of InGaAs strained quantum-well lasers

Strained-layer quantum-well (SQW) laser structures have been investigated for avionics applications requiring high-temperature performance. The authors have successfully demonstrated InGaAs-GaAs SQW lasers capable of CW operation up to 200 degrees C with more than 5 mW single-mode optical power. The...

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Bibliographic Details
Published inIEEE photonics technology letters Vol. 3; no. 4; pp. 308 - 310
Main Authors Fu, R.J., Hong, C.S., Chan, E.Y., Booher, D.J., Figueroa, L.
Format Journal Article
LanguageEnglish
Published IEEE 01.04.1991
Subjects
Aerospace electronics
Fiber lasers
Indium gallium arsenide
Power generation
Power lasers
Pump lasers
Quantum well lasers
Temperature
Threshold current
Waveguide lasers
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Summary:Strained-layer quantum-well (SQW) laser structures have been investigated for avionics applications requiring high-temperature performance. The authors have successfully demonstrated InGaAs-GaAs SQW lasers capable of CW operation up to 200 degrees C with more than 5 mW single-mode optical power. These lasers have an emission wavelength of approximately=980 nm, threshold current density of 200 A/cm/sup 2/, differential quantum efficiency of 60%, high output power of approximately=1 W with 50 mu m stripe, and characteristic temperature of 130-140 K.< >
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1041-1135
1941-0174
DOI:10.1109/68.82095