Strong Hole Self-Doping in LaMnO3 Thin Film on a-SiO2 Substrate Produced by Metal Organic Decomposition Method

We have studied the strong hole self-doping into LaMnO3 (LMO) thin films produced by metal organic decomposition (MOD) method. With different heat treatment conditions, LMO thin films have been prepared by the MOD method in the 100 % O2 gas atmosphere. We consider that the excess of O2- ions in LMO...

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Published inMaterials science forum Vol. 962; pp. 17 - 21
Main Authors Taniguchi, Toshifumi, Shimizu, Tetsuo, Kitamura, Tohru, Kobori, Hiromi
Format Journal Article
LanguageEnglish
Published Pfaffikon Trans Tech Publications Ltd 01.07.2019
Subjects
Antiferromagnetism
Decomposition
Doping
Ferromagnetism
Heat treatment
Lanthanum compounds
Silicon dioxide
Single crystals
Substrates
Thin films
LaMnO3
Metal Organic Decomposition
Thin Film
Hole Self-Doping
Ferromagnetic Metal
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Abstract We have studied the strong hole self-doping into LaMnO3 (LMO) thin films produced by metal organic decomposition (MOD) method. With different heat treatment conditions, LMO thin films have been prepared by the MOD method in the 100 % O2 gas atmosphere. We consider that the excess of O2- ions in LMO thin films induces the strong hole self-doping into LMO ones. The quantity of excess O2- ions in LMO is sensitive to the heat treatment conditions of the LMO production, especially the temperature, time and atmosphere gas. Although LMO single crystal is an antiferromagnetic insulator, LMO thin films we have produced in the 100 % O2 gas atmosphere by use of the MOD method shows the properties of ferromagnetic metal.
AbstractList We have studied the strong hole self-doping into LaMnO3 (LMO) thin films produced by metal organic decomposition (MOD) method. With different heat treatment conditions, LMO thin films have been prepared by the MOD method in the 100 % O2 gas atmosphere. We consider that the excess of O2- ions in LMO thin films induces the strong hole self-doping into LMO ones. The quantity of excess O2- ions in LMO is sensitive to the heat treatment conditions of the LMO production, especially the temperature, time and atmosphere gas. Although LMO single crystal is an antiferromagnetic insulator, LMO thin films we have produced in the 100 % O2 gas atmosphere by use of the MOD method shows the properties of ferromagnetic metal.
We have studied the strong hole self-doping into LaMnO 3 (LMO) thin films produced by metal organic decomposition (MOD) method. With different heat treatment conditions, LMO thin films have been prepared by the MOD method in the 100 % O 2 gas atmosphere. We consider that the excess of O 2- ions in LMO thin films induces the strong hole self-doping into LMO ones. The quantity of excess O 2- ions in LMO is sensitive to the heat treatment conditions of the LMO production, especially the temperature, time and atmosphere gas. Although LMO single crystal is an antiferromagnetic insulator, LMO thin films we have produced in the 100 % O 2 gas atmosphere by use of the MOD method shows the properties of ferromagnetic metal.
Author Kitamura, Tohru
Kobori, Hiromi
Shimizu, Tetsuo
Taniguchi, Toshifumi
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  surname: Taniguchi
  fullname: Taniguchi, Toshifumi
  email: ttani@ess.sci.osaka-u.ac.jp
  organization: Osaka University : Department of Physics
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  surname: Shimizu
  fullname: Shimizu, Tetsuo
  email: tetsuo-shimizu@aist.go.jp
  organization: National Institute of Advanced Industrial Science and Technology
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  fullname: Kitamura, Tohru
  organization: Konan University : Department of Physics
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  surname: Kobori
  fullname: Kobori, Hiromi
  email: kobori@konan-u.ac.jp
  organization: Konan University : Department of Physics, Faculty of Science and Engineering
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Cites_doi 10.1088/0953-8984/9/39/005
10.1088/0022-3727/46/17/175003
10.1006/jssc.1993.1142
10.1103/RevModPhys.70.1039
10.1201/9781482287493
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Keywords LaMnO3
Metal Organic Decomposition
Thin Film
Hole Self-Doping
Ferromagnetic Metal
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Notes Selected, peer reviewed papers from the 2nd International Conference on Sensors, Materials and Manufacturing (ICSMM 2018), November 19-21, 2018, Taiwan; International Conference on Materials Sciences and Nanomaterials (ICMSN 2018), July 11-13, 2018, United Kingdom and the 2nd International Conference on Materials and Intelligent Manufacturing (ICMIM 2018), August 24-26, 2018, Japan
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Snippet We have studied the strong hole self-doping into LaMnO3 (LMO) thin films produced by metal organic decomposition (MOD) method. With different heat treatment...
We have studied the strong hole self-doping into LaMnO 3 (LMO) thin films produced by metal organic decomposition (MOD) method. With different heat treatment...
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SubjectTerms Antiferromagnetism
Decomposition
Doping
Ferromagnetism
Heat treatment
Lanthanum compounds
Silicon dioxide
Single crystals
Substrates
Thin films
Title Strong Hole Self-Doping in LaMnO3 Thin Film on a-SiO2 Substrate Produced by Metal Organic Decomposition Method
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Volume 962
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