Strong Hole Self-Doping in LaMnO3 Thin Film on a-SiO2 Substrate Produced by Metal Organic Decomposition Method

We have studied the strong hole self-doping into LaMnO3 (LMO) thin films produced by metal organic decomposition (MOD) method. With different heat treatment conditions, LMO thin films have been prepared by the MOD method in the 100 % O2 gas atmosphere. We consider that the excess of O2- ions in LMO...

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Bibliographic Details
Published inMaterials science forum Vol. 962; pp. 17 - 21
Main Authors Taniguchi, Toshifumi, Shimizu, Tetsuo, Kitamura, Tohru, Kobori, Hiromi
Format Journal Article
LanguageEnglish
Published Pfaffikon Trans Tech Publications Ltd 01.07.2019
Subjects
Antiferromagnetism
Decomposition
Doping
Ferromagnetism
Heat treatment
Lanthanum compounds
Silicon dioxide
Single crystals
Substrates
Thin films
LaMnO3
Metal Organic Decomposition
Thin Film
Hole Self-Doping
Ferromagnetic Metal
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Summary:We have studied the strong hole self-doping into LaMnO3 (LMO) thin films produced by metal organic decomposition (MOD) method. With different heat treatment conditions, LMO thin films have been prepared by the MOD method in the 100 % O2 gas atmosphere. We consider that the excess of O2- ions in LMO thin films induces the strong hole self-doping into LMO ones. The quantity of excess O2- ions in LMO is sensitive to the heat treatment conditions of the LMO production, especially the temperature, time and atmosphere gas. Although LMO single crystal is an antiferromagnetic insulator, LMO thin films we have produced in the 100 % O2 gas atmosphere by use of the MOD method shows the properties of ferromagnetic metal.
Bibliography:Selected, peer reviewed papers from the 2nd International Conference on Sensors, Materials and Manufacturing (ICSMM 2018), November 19-21, 2018, Taiwan; International Conference on Materials Sciences and Nanomaterials (ICMSN 2018), July 11-13, 2018, United Kingdom and the 2nd International Conference on Materials and Intelligent Manufacturing (ICMIM 2018), August 24-26, 2018, Japan
ISSN:0255-5476
1662-9752
1662-9752
DOI:10.4028/www.scientific.net/MSF.962.17