Cancellation of sub-harmonic and second harmonic components to improve the linearity of a low-power consumption LNA using SiGe HBT

Three simple methods to improve the third‐order intercept point (IP3) of a low‐noise amplifier (LNA) for personal communication systems (PCS) applications or CDMA cellular handsets are introduced. Both simulations and results from previous works in the literature are compared in order to demonstrate...

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Bibliographic Details
Published inMicrowave and optical technology letters Vol. 37; no. 4; pp. 308 - 311
Main Authors Iturbide-Sanchez, Flavio, Jardon-Aguilar, Hildeberto, Tirado-Mendez, Jose Alfredo
Format Journal Article
LanguageEnglish
Published New York Wiley Subscription Services, Inc., A Wiley Company 20.05.2003
Subjects
high linearity
LNA
SiGe HBT
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Summary:Three simple methods to improve the third‐order intercept point (IP3) of a low‐noise amplifier (LNA) for personal communication systems (PCS) applications or CDMA cellular handsets are introduced. Both simulations and results from previous works in the literature are compared in order to demonstrate the effectiveness of these methods in improving the performance of the LNA in terms of linearity when low‐bias voltage is used. The LNA was designed to operate at 1.9 GHz, using a silicon germanium (SiGe) heterojunction bipolar transistor (HBT) and 2.4 V bias voltage. © 2003 Wiley Periodicals, Inc. Microwave Opt Technol Lett 37: 308–311, 2003; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.10903
Bibliography:ark:/67375/WNG-Z6HXSBG9-S
ArticleID:MOP10903
istex:F61526CEB8ECFCAF3109D8722C90F46BE46BD717
ISSN:0895-2477
1098-2760
DOI:10.1002/mop.10903