Defects Due to Metal Silicide Precipitation in Microelectronic Device Manufacturing: The Unlovely Face of Transition Metal Silicides
In microelectronics technology transition metals and their silicides play a prominent, but twofold role: On the one hand, selected metals like Ti, Co, Mo and W and/or their silicides are used, e.g., for interconnects and source/drain contacts, on the other hand, transition metals, in particular Fe,...
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Published in | Physica status solidi. B. Basic research Vol. 222; no. 1; pp. 303 - 317 |
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Main Authors | , |
Format | Journal Article |
Language | English |
Published |
Berlin
WILEY-VCH Verlag Berlin GmbH
01.11.2000
WILEY‐VCH Verlag Berlin GmbH Wiley |
Subjects | |
Online Access | Get full text |
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Summary: | In microelectronics technology transition metals and their silicides play a prominent, but twofold role: On the one hand, selected metals like Ti, Co, Mo and W and/or their silicides are used, e.g., for interconnects and source/drain contacts, on the other hand, transition metals, in particular Fe, Ni and Cu, entering inadvertently into the silicon substrates during device manufacturing can give rise to severe device yield and reliability problems. By electrical failure analysis methods providing failure detection and localisation in combination with structural defect (transmission electron microscopy (TEM)) and local elemental analysis methods (energy dispersive X‐ray analysis (EDX)) metal silicide precipitates have been identified as cause of the malfunction of mass production devices. The electrical activity of the defects created due to the precipitation of the metals as silicides during device manufacturing processes in device active zones is interpreted on the basis of recently published extensive experimental and theoretical studies conducted on the mechanisms of the electrical activity of Cu and Ni silicide precipitates. |
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Bibliography: | istex:132880C30B65F99EFAC028B24E3D8440813C5458 ArticleID:PSSB303 ark:/67375/WNG-X1DKCZBS-K |
ISSN: | 0370-1972 1521-3951 |
DOI: | 10.1002/1521-3951(200011)222:1<303::AID-PSSB303>3.0.CO;2-H |