MEXTRAM modeling of Si-SiGe HPTs

The integration of the photodetector is essential for optical communication chips. The heterojunction phototransistor (HPT) is integrable with the SiGe HBT process and can be modeled by a modified MEXTRAM model for the circuit simulation. The impact ionization to obtain an extra gain for the optoele...

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Bibliographic Details
Published inIEEE transactions on electron devices Vol. 51; no. 6; pp. 870 - 876
Main Authors Yuan, F., Shi, J.-W., Pei, Z., Liu, C.W.
Format Journal Article
LanguageEnglish
Published New York IEEE 01.06.2004
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Circuits
Computer simulation
Contact
Conversion
Gain
Germanium alloys
Heterojunction bipolar transistors
Illumination
Impact ionization
Optoelectronics
Photodetectors
Phototransistors
Semiconductor device modeling
Semiconductor materials
Silicon
Silicon alloys
Silicon germanides
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Summary:The integration of the photodetector is essential for optical communication chips. The heterojunction phototransistor (HPT) is integrable with the SiGe HBT process and can be modeled by a modified MEXTRAM model for the circuit simulation. The impact ionization to obtain an extra gain for the optoelectronic conversion and the "early voltage reduction" under constant illumination are well modeled in a modified model. The base recombination current (nkT current) and the substrate contact to enhance the HPT speed are incorporated in ac model. It shows a good agreement between measurement and simulation.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2004.829622