New driver for high-efficiency switching RF power amplifiers

This paper describes a new driver circuit for high‐efficiency RF switching power amplifiers (class E, class D) based on a small‐area driver transistor, intrinsic input capacitances of the output‐power transistor, and a shaping network. The driver operation is based on class‐E principles. Among the m...

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Bibliographic Details
Published inMicrowave and optical technology letters Vol. 43; no. 5; pp. 370 - 372
Main Author Ortega-González, Francisco Javier
Format Journal Article
LanguageEnglish
Published Hoboken Wiley Subscription Services, Inc., A Wiley Company 05.12.2004
Subjects
class D
class E
driver
high efficiency
power amplifier
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Summary:This paper describes a new driver circuit for high‐efficiency RF switching power amplifiers (class E, class D) based on a small‐area driver transistor, intrinsic input capacitances of the output‐power transistor, and a shaping network. The driver operation is based on class‐E principles. Among the main benefits of this new driver are high efficiency, very low‐bias voltage, and circuit simplicity. © 2004 Wiley Periodicals, Inc. Microwave Opt Technol Lett 43: 370–372, 2004; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20472
Bibliography:ArticleID:MOP20472
Spanish National Board of Scientific and Technology Research (MCYT) - No. TIC2001-3839-C03-01
ark:/67375/WNG-KVZKF6MB-0
istex:922C5A16FE5FAAAD938E6FBD030E513EACE44859
ISSN:0895-2477
1098-2760
DOI:10.1002/mop.20472