Analytic theory for current-voltage characteristics and field distribution of GaAs MESFET's

The two-dimensional Poisson equation has been solved analytically to obtain the potential and field distribution in the saturation regime of GaAs MESFETs. A physical analytic model is developed for output current-voltage characteristics and for describing the behavior of electrons in GaAs FETs. In t...

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Bibliographic Details
Published inIEEE transactions on electron devices Vol. 36; no. 2; pp. 269 - 280
Main Authors Chang, C.-S., Day, D.-Y.S.
Format Journal Article
LanguageEnglish
Published New York, NY IEEE 01.02.1989
Institute of Electrical and Electronics Engineers
Subjects
Applied sciences
Current-voltage characteristics
Electron mobility
Electronics
Exact sciences and technology
FETs
Gallium arsenide
HEMTs
MESFETs
MODFETs
MOSFET circuits
Poisson equations
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Voltage
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Summary:The two-dimensional Poisson equation has been solved analytically to obtain the potential and field distribution in the saturation regime of GaAs MESFETs. A physical analytic model is developed for output current-voltage characteristics and for describing the behavior of electrons in GaAs FETs. In this model, the Chang-Fetterman equation is used to approximate the electron drift velocity versus electric field. The resulting l-V curves are in excellent agreement with experimental data. The field distribution and the electron concentration and velocity profiles are consistent with the physical behavior of electrons in GaAs MESFETs.< >
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9383
1557-9646
DOI:10.1109/16.19926