Analytic theory for current-voltage characteristics and field distribution of GaAs MESFET's
The two-dimensional Poisson equation has been solved analytically to obtain the potential and field distribution in the saturation regime of GaAs MESFETs. A physical analytic model is developed for output current-voltage characteristics and for describing the behavior of electrons in GaAs FETs. In t...
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Published in | IEEE transactions on electron devices Vol. 36; no. 2; pp. 269 - 280 |
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Main Authors | , |
Format | Journal Article |
Language | English |
Published |
New York, NY
IEEE
01.02.1989
Institute of Electrical and Electronics Engineers |
Subjects | |
Online Access | Get full text |
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Summary: | The two-dimensional Poisson equation has been solved analytically to obtain the potential and field distribution in the saturation regime of GaAs MESFETs. A physical analytic model is developed for output current-voltage characteristics and for describing the behavior of electrons in GaAs FETs. In this model, the Chang-Fetterman equation is used to approximate the electron drift velocity versus electric field. The resulting l-V curves are in excellent agreement with experimental data. The field distribution and the electron concentration and velocity profiles are consistent with the physical behavior of electrons in GaAs MESFETs.< > |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0018-9383 1557-9646 |
DOI: | 10.1109/16.19926 |