MOVPE of AlN and GaN by using novel precursors

The technique of low pressure MOVPE has been used to grow thin films of AlN and GaN on silicon and (0001) sapphire substrates using the single-source precursors diethylaluminum azide [Et 2AlN 3] 3 (DEAA) and diethygallium azide [Et 2GaN 3] 3 (DEGA). In-situ growth rate measurements have been perform...

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Bibliographic Details
Published inJournal of crystal growth Vol. 107; no. 1; pp. 376 - 380
Main Authors Ho, Kwok-Lun, Jensen, Klavs F., Hwang, Jen-Wei, Gladfelter, Wayne L., Evans, John F.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 1991
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Summary:The technique of low pressure MOVPE has been used to grow thin films of AlN and GaN on silicon and (0001) sapphire substrates using the single-source precursors diethylaluminum azide [Et 2AlN 3] 3 (DEAA) and diethygallium azide [Et 2GaN 3] 3 (DEGA). In-situ growth rate measurements have been performed for AlN growth on Si substrates. For comparison with conventional MOVPE growth, epitaxial films of Al x Ga 1− x N have also been deposited from triethylgallium (TEG), triethylaluminum (TEAl) and NH 3 under similar conditions. The properties of the grown films are discussed in terms of precursor selection and growth conditions.
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(91)90489-R