Electronic excitations in quantum wires and dots

Resonant ineleastic light scattering is used to study collective and single-particle excitations in GaAs/AlGaAs based quantum wires and quantum dots. Interlevel transitions show a significant blue shift with decreasing confinement length. These excitations are dispersionless in dots. In wires both i...

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Bibliographic Details
Published inPhysica. B, Condensed matter Vol. 227; no. 1; pp. 6 - 10
Main Authors Abstreiter, G., Strenz, R., Schedelbeck, G., Silveira, E.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.09.1996
Subjects
Electronic excitations
Inelastic light scattering
Quantized semiconductor structures
Electronic excitations
Inelastic light scattering
Quantized semiconductor structures
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Summary:Resonant ineleastic light scattering is used to study collective and single-particle excitations in GaAs/AlGaAs based quantum wires and quantum dots. Interlevel transitions show a significant blue shift with decreasing confinement length. These excitations are dispersionless in dots. In wires both inter- and intrasubband transitions are observed which show the expected broadening and dispersion with increasing in-plane wave vector. The wire structures are tunable by applying a gate voltage. Electronic excitations have been studied in the whole regime from a density modulated 2D electron gas to isolated quantum wires.
ISSN:0921-4526
1873-2135
DOI:10.1016/0921-4526(96)00319-5