Noise phenomena associated with dislocations in bipolar transistors
The effect of emitter-edge dislocations on the low-frequency noise of bipollar transistors was studied via phosporus surface concentration. A threshold in both noise factor and dislocation density was observed for surface concentration greater than 4.3 × 10 20 cm −3. It has been found that the dislo...
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| Published in | Solid-state electronics Vol. 26; no. 2; pp. 109 - 113 |
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| Main Authors | , |
| Format | Journal Article |
| Language | English |
| Published |
Elsevier Ltd
01.01.1983
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| Online Access | Get full text |
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| Summary: | The effect of emitter-edge dislocations on the low-frequency noise of bipollar transistors was studied via phosporus surface concentration. A threshold in both noise factor and dislocation density was observed for surface concentration greater than 4.3 × 10
20 cm
−3. It has been found that the dislocations affect the noise considerably when their density is in excess of 10
6 cm
−2. |
|---|---|
| ISSN: | 0038-1101 1879-2405 |
| DOI: | 10.1016/0038-1101(83)90111-9 |