Valence band offset and interface formation of Ge/ZnSe(100) studied by synchrotron radiation photoemission

The formation and band lineup of the Ge/ZnSe(100) interface have been studied by synchrotron radiation photoemission spectroscopy. Core level intensity measurements from the ZnSe substrate as well as from the Ge overlayer show a two-dimensional deposition of Ge film. Core level spectra indicate that...

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Published inJournal of electron spectroscopy and related phenomena Vol. 80; pp. 193 - 196
Main Authors Fengyuan, Yang, Dayan, Ban, Rongchuan, Fang, Shihong, Xu, Pengshou, Xu, Shixin, Yuan
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.05.1996
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Summary:The formation and band lineup of the Ge/ZnSe(100) interface have been studied by synchrotron radiation photoemission spectroscopy. Core level intensity measurements from the ZnSe substrate as well as from the Ge overlayer show a two-dimensional deposition of Ge film. Core level spectra indicate that Ge atoms react with Se atoms slightly at the interface. We derive a valence band offset of 1.76±0.1eV for Ge/ZnSe(100).
ISSN:0368-2048
1873-2526
DOI:10.1016/0368-2048(96)02954-4