Luminescence excitation of pure and impure BeO single crystals using synchrotron radiation

• Published in: Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Vol. 282; no. 2; pp. 559 - 562
• Main Authors: Ivanov, V.Y., Pustovarov, V.A., Kruzhalov, A.V., Shulgin, B.V.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 10.10.1989
• ISSN: 0168-9002; 1872-9576
• DOI: 10.1016/0168-9002(89)90046-6

Absorption, reflection, UV and VUV luminescence excitation and thermoluminescence excitation spectra have been measured for BeO and BeOZn crystals in the energy range from 8 to 35 eV, using synchrotron radiation. The nature of electronic excitations in the fundamental absorption edge region is discussed; the value of the forbidden-gap energy, E g, is estimated as 10.6 eV for BeO. Intrinsic luminescence with a 6.7 eV maximum for BeO and impurity luminescence with a 6.0 eV maximum for BeOZn are due to the relaxation of both optically created self-trapped or impurity-trapped excitons. The multiplication effect of electronic excitations with E>2 E g (or E≥2 E ex for 6.7 eV luminescence) for beryllium oxide is due to the inelastic scattering of hot photoelectrons or hot photoholes.