Comparison of phosphorus, arsenic and boron implants into bulk silicon and SOS

Phosphorus, arsenic and boron ions were implanted into both bulk silicon and silicon-on-sapphire (SOS) substrates. It was found that for phosphorus and arsenic the bulk and SOS impurity profiles are identical, whereas for boron the profiles in SOS are deeper than those in bulk silicon. It is assumed...

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Bibliographic Details
Published inSolid-state electronics Vol. 33; no. 6; pp. 651 - 654
Main Authors Amberiadis, Kostas, Kump, Michael R., Magee, Charles W.
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.06.1990
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Summary:Phosphorus, arsenic and boron ions were implanted into both bulk silicon and silicon-on-sapphire (SOS) substrates. It was found that for phosphorus and arsenic the bulk and SOS impurity profiles are identical, whereas for boron the profiles in SOS are deeper than those in bulk silicon. It is assumed that the deeper profiles in SOS are due to a reduction of the electronic stopping power in the SOS films, which affects the lighter boron ions more than the heavier phosphorus and arsenic ions. This conjecture is supported by Monte Carlo implant simulations, which indicate that a reduction of the electronic stopping by roughly 10% could give rise to the observed differences in the SOS and bulk silicon implant profiles.
ISSN:0038-1101
1879-2405
DOI:10.1016/0038-1101(90)90177-G