Anderson localisation of holes in a Si inversion layer

Below 2.3 K temperature dependence of hole transport in the inversion layer of a P channel MNOSFET is consistent with two dimensional variable range hopping. An Anderson transition is observed as the Fermi level is raised. The minimum metallic conductance agrees with the value predicted by a two dim...

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Bibliographic Details
Published inPhysics letters. A Vol. 48; no. 2; pp. 113 - 114
Main Authors Pepper, M., Pollitt, S., Adkins, C.J.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.01.1974
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Summary:Below 2.3 K temperature dependence of hole transport in the inversion layer of a P channel MNOSFET is consistent with two dimensional variable range hopping. An Anderson transition is observed as the Fermi level is raised. The minimum metallic conductance agrees with the value predicted by a two dimensional adaptation of Motts formula using a localisation criterion close to theoretical estimates.
ISSN:0375-9601
1873-2429
DOI:10.1016/0375-9601(74)90424-1