High Growth Rate of Microcrystalline Silicon Films Prepared by ICP-CVD with Internal Low Inductance Antennas

The plasma parameters in ICP-CVD system with internal low inductance antennas（LIA） were diagnosed by Langmuir probe.The ions density（Ni） reached 1011-1012 cm-3,and the electron temperature（Te） was below ca.2 eV,which was slightly decreased with applied power.A p-type hydrogenated microcrystalline si...

Full description

Saved in:
Bibliographic Details
Published inPlasma science & technology Vol. 16; no. 5; pp. 502 - 505
Main Author 陈玖香 王伟仲 Jyh Shiram CHERNG 陈强
Format Journal Article
LanguageEnglish
Published 01.05.2014
Subjects
Antennas
Density
Deposition
Inductance
Langmuir-Blodgett films
Optimization
Silicon films
Silicon substrates
Online AccessGet full text

Cover

More Information
Summary:The plasma parameters in ICP-CVD system with internal low inductance antennas（LIA） were diagnosed by Langmuir probe.The ions density（Ni） reached 1011-1012 cm-3,and the electron temperature（Te） was below ca.2 eV,which was slightly decreased with applied power.A p-type hydrogenated microcrystalline silicon（μc-Si：H） film was prepared on glass substrate.After optimization of the processing parameters in flow ratio of SiH4：B2H6：H2,a high quality μc-Si：H film with deposition rate above 1.0 nm/s was achieved in this work.
Bibliography:CHEN Jiuxiang WANG Weizhong Jyh Shiram CHERNG, CHEN Qiang （1Lab of Plasma Physics and Materials, Beijing 102600, China 2Department of Materials Engineering, Taiwan Beijing Institute of Graphic Communication, Mingchi University of Technology, Taipei 24301）
ICP-CVD;plasma parameters;microcrystalline silicon films;deposition rate
The plasma parameters in ICP-CVD system with internal low inductance antennas（LIA） were diagnosed by Langmuir probe.The ions density（Ni） reached 1011-1012 cm-3,and the electron temperature（Te） was below ca.2 eV,which was slightly decreased with applied power.A p-type hydrogenated microcrystalline silicon（μc-Si：H） film was prepared on glass substrate.After optimization of the processing parameters in flow ratio of SiH4：B2H6：H2,a high quality μc-Si：H film with deposition rate above 1.0 nm/s was achieved in this work.
34-1187/TL
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1009-0630
DOI:10.1088/1009-0630/16/5/10