Sources of silicon contamination in LEC-grown InP crystals

InP crystals were grown by the LEC technique in SiO 2 and BN crucibles using undoped InP polymaterial synthesized in BN boats. Chemical analyses of the Si contamination was made by atomic absorption spectroscopy using a graphite tube system. A comparison of the Si contents of the InP polymaterial, t...

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Bibliographic Details
Published inJournal of crystal growth Vol. 64; no. 1; pp. 37 - 39
Main Authors Müller, G., Pfannenmüller, J., Tomzig, E., Völkl, J., Köhl, F.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.11.1983
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Summary:InP crystals were grown by the LEC technique in SiO 2 and BN crucibles using undoped InP polymaterial synthesized in BN boats. Chemical analyses of the Si contamination was made by atomic absorption spectroscopy using a graphite tube system. A comparison of the Si contents of the InP polymaterial, the InP crystals grown in BN and SiO 2 crucibles and the B 2O 3 encapsulant before and after growth led to the following result: LEC growth of InP in SiO 2 crucibles increases the Si content in the crystals due to the reaction between B 2O 3 and the SiO 2 crucible.
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(83)90245-2