Rectifying diodes with a metal/intrinsic semiconductor/semiconductor structure using polycrystalline diamond films

• Published in: Diamond and related materials Vol. 2; no. 5; pp. 1107 - 1111
• Main Authors: Miyata, K., Kobashi, K., Dreifus, D.L.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 13.04.1993
• ISSN: 0925-9635; 1879-0062
• DOI: 10.1016/0925-9635(93)90281-6

Rectifying diodes with a metal/intrinsic semiconductor/semiconductor structure formed by Al/undoped polycrystalline diamond/B-doped p-type polycrystalline diamond film were investigated. The undoped diamond/B-doped diamond bilayer films were grown by microwave plasma chemical vapor deposition. Good rectification ratios of 10 4-10 5 at 5 V were obtained for atomic B concentrations between 1 × 10 18 and 1 × 10 19 cm −3. A reverse-bias breakdown voltage in excess of 20 V was observed for an undoped diamond layer 0.4 μm thick. Furthermore, a rectification ratio of 10 3 at 5 V was obtained, even at 300°C. For comparison, metal/semiconductor diodes formed by Al/B-doped polyerystalline diamond film were fabricated, but only a non-linear non-rectifying behavior was observed.