Electron spin resonance in AlGaAs/GaAs in the regime of fractional filling

We have studied the electron spin resonance (ESR) at millimeterwave frequencies in high mobility AlGaAs/GaAs samples for the first time at filling factors v < 1 outside the v = 1 resistance minimum. The magnetic field dependence of the ESR measured at T = 1.6 K agrees with the calculations made b...

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Bibliographic Details
Published inSurface science Vol. 361; pp. 55 - 58
Main Authors Meisels, R., Kulac, I., Sundaram, G., Kuchar, F., McCombe, B.D., Weimann, G., Schlapp, W.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.01.1996
Subjects
Electrical transport measurements
Electron spin resonance
Gallium arsenide
Quantum effects
Semiconductor—semiconductor heterojunctions
Electrical transport measurements
Quantum effects
Semiconductor—semiconductor heterojunctions
Electron spin resonance
Gallium arsenide
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Summary:We have studied the electron spin resonance (ESR) at millimeterwave frequencies in high mobility AlGaAs/GaAs samples for the first time at filling factors v < 1 outside the v = 1 resistance minimum. The magnetic field dependence of the ESR measured at T = 1.6 K agrees with the calculations made by Lommer et al. down to v ≈ 0.5. At the low millimeterwave powers used in this work no indication was found for the Overhauser shift reported previously by Dobers et al.
ISSN:0039-6028
1879-2758
DOI:10.1016/0039-6028(96)00329-9