Edge absorption and photoluminescence in closely compensated GaAs

It is shown that the position of the spectral peak of photoluminescence at 77°K in Zn doped GaAs of known compensation is correlated with the shape and position of the absorption edge. The systematic variation of photoluminescence and edge absorption with compensation and doping can be understood in...

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Bibliographic Details
Published inSolid state communications Vol. 3; no. 1; pp. 9 - 13
Main Authors Lucovsky, G., Varga, A.J., Schwarz, R.F.
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 1965
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Summary:It is shown that the position of the spectral peak of photoluminescence at 77°K in Zn doped GaAs of known compensation is correlated with the shape and position of the absorption edge. The systematic variation of photoluminescence and edge absorption with compensation and doping can be understood in terms of transitions involving both donor and acceptor states. Es wird gezeigt das die Lage der Spektrallinie der Photolumineszenz bei 77°K in Zn dotierten GaAs von bekannten Kompensation, mit der Form und Lage der Absorptionskante in Zusammenhang steht. Die systematische Anderung der Photolumineszenz und Absorptionskante mit Kompensation und Dotierung kann durch Übergänge die Akzeptoren und Donatoren einschliessen erklärt werden.
ISSN:0038-1098
1879-2766
DOI:10.1016/0038-1098(65)90159-6